Inventor · disambiguated record
Yang-Kon Kim
Also filed as: KIM YANG-KON
28 granted patents·6 pending applications·108 citations·filing 2014–2019
94Inventor score
Top patents by PatentIndex Score
34 records- 0198US9865806B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Jan 9, 2018·52 cites·20 claims
- 0295US10103318B2Magnetoresistive elementTOSHIBA MEMORY CORP·Filed 2016·Granted Oct 16, 2018·14 cites·13 claims
- 0393US9991313B2Magnetic memory and manufacturing method of the sameTOSHIBA MEMORY CORP·Filed 2015·Granted Jun 5, 2018·10 cites·16 claims
- 0488US9711202B2Electronic deviceSK HYNIX INC·Filed 2016·Granted Jul 18, 2017·8 cites·16 claims
- 0586US10777742B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2019·Granted Sep 15, 2020·2 cites·16 claims
- 0685US9734060B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Aug 15, 2017·4 cites·18 claims
- 0782US10133689B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Nov 20, 2018·3 cites·19 claims
- 0877US10170691B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Jan 1, 2019·2 cites·19 claims
- 0977US9865319B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Jan 9, 2018·2 cites·17 claims
- 1076US10042559B2Electronic devices having semiconductor memory with interface enhancement layerSK HYNIX INC·Filed 2017·Granted Aug 7, 2018·2 cites·15 claims
- 1174US10395708B2Electronic deviceSK HYNIX INC·Filed 2018·Granted Aug 27, 2019·3 cites·20 claims
- 1270US9841915B1Electronic deviceSK HYNIX INC·Filed 2017·Granted Dec 12, 2017·1 cites·20 claims
- 1367US9847474B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Dec 19, 2017·1 cites·16 claims
- 1464US9529714B2Electronic deviceKIM YANG-KON·Filed 2014·Granted Dec 27, 2016·2 cites·8 claims
- 1560US10490741B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Nov 26, 2019·1 cites·7 claims
- 1659US10586917B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2018·Granted Mar 10, 2020·0 cites·16 claims
- 1758US11195988B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2018·Granted Dec 7, 2021·0 cites·23 claims
- 1858US10305030B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2018·Granted May 28, 2019·0 cites·19 claims
- 1957US10134458B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2018·Granted Nov 20, 2018·0 cites·20 claims
- 2057US10002903B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Jun 19, 2018·1 cites·21 claims
- 2156US10120799B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2017·Granted Nov 6, 2018·0 cites·19 claims
- 2256US2019079873A1Electronic device having variable resistance elementSK HYNIX INC·Filed 2018·Application pending·0 cites
- 2355US10062424B2Electronic deviceSK HYNIX INC·Filed 2017·Granted Aug 28, 2018·0 cites·20 claims
- 2454US10153423B2Electronic deviceSK HYNIX INC·Filed 2017·Granted Dec 11, 2018·0 cites·28 claims
- 2549US10685692B2Electronic devices and method for fabricating the sameSK HYNIX INC·Filed 2018·Granted Jun 16, 2020·0 cites·7 claims
- 2649US2016043300A1Electronic deviceKIM YANG-KON·Filed 2014·Application pending·0 cites
- 2748US10305028B2Electronic device including an under layer and a perpendicular magnetic anisotropy increasing layer having a different crystal structure from the under layerSK HYNIX INC·Filed 2018·Granted May 28, 2019·0 cites·20 claims
- 2841US10516099B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Dec 24, 2019·0 cites·15 claims
- 2939US10367137B2Electronic device including a semiconductor memory having a variable resistance element including two free layersSK HYNIX INC·Filed 2017·Granted Jul 30, 2019·0 cites·15 claims
- 3038US10978637B2Method for fabricating electronic deviceSK HYNIX INC·Filed 2018·Granted Apr 13, 2021·0 cites·18 claims
- 3138US2017263680A1Magnetoresistive memory device and manufacturing method of the sameTOSHIBA KK·Filed 2016·Application pending·0 cites
- 3237US2016181514A1Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2015·Application pending·0 cites
- 3335US2018211994A1Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2017·Application pending·0 cites
- 3434US2018277745A1Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →