Inventor · disambiguated record
Ya-Chin King
Also filed as: KING YA-CHIN
60 granted patents·39 pending applications·360 citations·filing 1995–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD32LIN CHRONG-JUNG16EMEMORY TECHNOLOGY INC9UNIV NAT TSING HUA7AU OPTRONICS CORP3
Top patents by PatentIndex Score
99 records- 0196US12051466B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·2 cites·20 claims
- 0295US11824133B2Detection using semiconductor detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 21, 2023·3 cites·20 claims
- 0394US11646079B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·4 cites·13 claims
- 0491US7164114B2Digital pixel sensor with clock count output and operating method thereofVIA TECH INC·Filed 2005·Granted Jan 16, 2007·26 cites·11 claims
- 0590US5880511ALow-voltage punch-through transient suppressor employing a dual-base structureSEMTECH CORP·Filed 1995·Granted Mar 9, 1999·87 cites·3 claims
- 0689US7590005B2Program and erase methods with substrate transient hot carrier injections in a non-volatile memoryMACRONIX INT CO LTD·Filed 2007·Granted Sep 15, 2009·16 cites·26 claims
- 0787US2025364047A1Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0886US12424279B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·19 claims
- 0985US12426517B2Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 1085US12009177B2Detection using semiconductor detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 11, 2024·1 cites·20 claims
- 1185US6518126B2Method of forming and operating trench split gate non-volatile flash memory cell structureEMEMORY TECHNOLOGY INC·Filed 2002·Granted Feb 11, 2003·36 cites·5 claims
- 1284US7952159B2Photo sensor and flat display panelAU OPTRONICS CORP·Filed 2008·Granted May 31, 2011·6 cites·13 claims
- 1382US12211949B2Semiconductor detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 1482US8384155B2Semiconductor capacitorEMEMORY TECHNOLOGY INC·Filed 2007·Granted Feb 26, 2013·8 cites·14 claims
- 1582US7829920B2Photo detector and a display panel having the sameAU OPTRONICS CORP·Filed 2008·Granted Nov 9, 2010·6 cites·14 claims
- 1682US2025299756A1One-time-programmable memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1782US2025359489A1Resistive memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1882US2025142985A1Semiconductor detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1981US11043601B2Non-volatile memory cell and non-volatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·2 cites·20 claims
- 2081US8107274B2Variable and reversible resistive element, non-volatile memory device and methods for operating and manufacturing the non-volatile memory deviceLIN CHRONG-JUNG·Filed 2009·Granted Jan 31, 2012·8 cites·12 claims
- 2180US12347504B2One-time-programmable memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 2280US9831130B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 28, 2017·3 cites·20 claims
- 2380US2025355363A1Semiconductor fabrication apparatus and method of using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2478US2025126929A1Semiconductor structure with conductive ringsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2577US7881112B2Program and erase methods with substrate transient hot carrier injections in a non-volatile memoryMACRONIX INT CO LTD·Filed 2009·Granted Feb 1, 2011·7 cites·20 claims
- 2676US6015999ALow-voltage punch-through transient suppressor employing a dual-base structureSEMTECH CORP·Filed 1998·Granted Jan 18, 2000·34 cites·11 claims
- 2775US12041860B2Resistive memory device and method for manufacturing with protrusion of electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 2875US8072810B2Program and erase methods with substrate transient hot carrier injections in a non-volatile memoryHSU TZU-HSUAN·Filed 2011·Granted Dec 6, 2011·4 cites·13 claims
- 2974US12249662B2Semiconductor device, manufacturing method thereof, and detecting method using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 3074US8143090B2Method of fabricating photo sensorWENG CHIEN-SEN·Filed 2011·Granted Mar 27, 2012·1 cites·12 claims
- 3174US6855994B1Multiple-thickness gate oxide formed by oxygen implantationUNIV CALIFORNIA·Filed 1999·Granted Feb 15, 2005·29 cites·10 claims
- 3274US2024290575A1Detection using semiconductor detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3372US11335609B2Micro detectorUNIV NAT TSING HUA·Filed 2019·Granted May 17, 2022·1 cites·7 claims
- 3472US7551494B2Single-poly non-volatile memory device and its operation methodEMEMORY TECHNOLOGY INC·Filed 2008·Granted Jun 23, 2009·3 cites·8 claims
- 3572USRE38608ELow-voltage punch-through transient suppressor employing a dual-base structureSEMTECH CORP·Filed 2002·Granted Oct 5, 2004·18 cites·28 claims
- 3670US12399432B2Semiconductor fabrication apparatus and method of using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 26, 2025·0 cites·20 claims
- 3770US11695082B2Non-volatile memory cell and non-volatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·0 cites·20 claims
- 3870US7737533B2Low voltage transient voltage suppressor with tapered recess extending into substrate of device allowing for reduced breakdown voltageVISHAY GEN SEMICONDUCTOR LLC·Filed 2007·Granted Jun 15, 2010·5 cites·9 claims
- 3968US8184486B2Tunable current driver and operating method thereofLIN CHRONG-JUNG·Filed 2008·Granted May 22, 2012·1 cites·14 claims
- 4067US11653503B2Semiconductor structure with data storage structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 16, 2023·0 cites·20 claims
- 4167US8093649B2Flash memory cellLIN CHRONG-JUNG·Filed 2009·Granted Jan 10, 2012·3 cites·4 claims
- 4267US6842374B2Method for operating N-channel electrically erasable programmable logic deviceEMEMORY TECHNOLOGY INC·Filed 2003·Granted Jan 11, 2005·13 cites·14 claims
- 4365US10269437B2Non-volatile memory device and operation method of the sameCOPEE TECH COMPANY·Filed 2018·Granted Apr 23, 2019·1 cites·2 claims
- 4465US2025172520A1Detection device and method for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4563US12040028B2Low voltage one-time-programmable memory and array thereofUNIV NAT TSING HUA·Filed 2022·Granted Jul 16, 2024·0 cites·10 claims
- 4663US8547728B2Non-volatile memory device and methods for manufacturing the sameLIN CHRONG-JUNG·Filed 2011·Granted Oct 1, 2013·1 cites·7 claims
- 4763US8232978B2Optical reflected touch panel and pixels and system thereofCHIANG WEN-JEN·Filed 2009·Granted Jul 31, 2012·3 cites·21 claims
- 4862US9679818B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 13, 2017·1 cites·20 claims
- 4961US6819594B2Electrically erasable programmable logic deviceEMEMORY TECHNOLOGY INC·Filed 2003·Granted Nov 16, 2004·11 cites·30 claims
- 5060US2025140685A1Integrated circuit device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 99 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →