Inventor · disambiguated record
Yasutaka Kohno
Also filed as: KOHNO YASUTAKA
18 granted patents·344 citations·filing 1988–1996
95Inventor score
Top patents by PatentIndex Score
18 records- 0190US5341015ASemiconductor device with reduced stress on gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Aug 23, 1994·80 cites·5 claims
- 0276US5358885AMethod of manufacturing a field effect transistor with a T-shaped gate electrode and reduced capacitanceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Oct 25, 1994·41 cites·5 claims
- 0364US5471073AField effect transistor and method for producing the field effect transistorMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Nov 28, 1995·25 cites·13 claims
- 0463US4923823AMethod of fabricating a self aligned semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted May 8, 1990·21 cites·16 claims
- 0562US5496748AMethod for producing refractory metal gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Mar 5, 1996·22 cites·15 claims
- 0661US4997779AMethod of making asymmetrical gate field effect transistorMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Mar 5, 1991·19 cites·4 claims
- 0755US5693560ASemiconductor device electrodeMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Dec 2, 1997·18 cites·16 claims
- 0853US5322806AMethod of producing a semiconductor device using electron cyclotron resonance plasma CVD and substrate biasingMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jun 21, 1994·19 cites·6 claims
- 0951US5888859AMethod of fabricating semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 30, 1999·18 cites·7 claims
- 1051US5391899ACompound semiconductor device with a particular gate structureMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 21, 1995·14 cites·4 claims
- 1146US5808332AField-effect semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 15, 1998·10 cites·8 claims
- 1244US5548144ARecessed gate field effect transistorMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 20, 1996·10 cites·3 claims
- 1344US5187112AMethod for producing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Feb 16, 1993·15 cites·6 claims
- 1442US5888860AMethod of making field effect transistorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 30, 1999·8 cites·5 claims
- 1541US5534452AMethod for producing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 9, 1996·10 cites·7 claims
- 1638US5093274ASemiconductor device and method for manufacture thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Mar 3, 1992·10 cites·16 claims
- 1730US5250453AProduction method of a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Oct 5, 1993·3 cites·6 claims
- 1823US5448096ASemiconductor device with reduced stress applied to gate electrodeMITSUBISHI DENKI KAUSHIKI KAIS·Filed 1994·Granted Sep 5, 1995·1 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →