Inventor · disambiguated record
Yasushi Kurata
Also filed as: KURATA YASUSHI
35 granted patents·25 pending applications·655 citations·filing 1995–2022
98Inventor score
Top patents by PatentIndex Score
60 records- 0195US7618491B2Scintillator single crystal and production method of sameHITACHI CHEMICAL CO LTD·Filed 2006·Granted Nov 17, 2009·25 cites·4 claims
- 0293US7531036B2Single crystal heat treatment methodHITACHI CHEMICAL CO LTD·Filed 2006·Granted May 12, 2009·14 cites·14 claims
- 0393US6221118B1Cerium oxide abrasive and method of polishing substratesHITACHI CHEMICAL CO LTD·Filed 1997·Granted Apr 24, 2001·123 cites·1 claims
- 0490US6863700B2Cerium oxide abrasive and method of polishing substratesHITACHI CHEMICAL CO LTD·Filed 2001·Granted Mar 8, 2005·37 cites·17 claims
- 0588US6343976B1Abrasive, method of polishing wafer, and method of producing semiconductor deviceHITACHI CHEMICAL CO LTD·Filed 1998·Granted Feb 5, 2002·60 cites·27 claims
- 0687US7837800B2CMP polishing slurry and polishing methodHITACHI CHEMICAL CO LTD·Filed 2008·Granted Nov 23, 2010·10 cites·8 claims
- 0787US7319072B2Polishing medium for chemical-mechanical polishing, and method of polishing substrate memberHITACHI CHEMICAL CO LTD·Filed 2006·Granted Jan 15, 2008·13 cites·11 claims
- 0886US6783434B1CMP abrasive, liquid additive for CMP abrasive and method for polishing substrateHITACHI CHEMICAL CO LTD·Filed 1999·Granted Aug 31, 2004·61 cites·23 claims
- 0986US6420269B2Cerium oxide abrasive for polishing insulating films formed on substrate and methods for using the sameHITACHI CHEMICAL CO LTD·Filed 1997·Granted Jul 16, 2002·97 cites·75 claims
- 1085US7749323B2Single crystal for scintillator and method for manufacturing sameHITACHI CHEMICAL CO LTD·Filed 2007·Granted Jul 6, 2010·12 cites·14 claims
- 1185US7367870B2Polishing fluid and polishing methodHITACHI CHEMICAL CO LTD·Filed 2003·Granted May 6, 2008·29 cites·19 claims
- 1281US5728213AMethod of growing a rare earth silicate single crystalHITACHI CHEMICAL CO LTD·Filed 1997·Granted Mar 17, 1998·38 cites·13 claims
- 1380US8999281B2Scintillator single crystal, heat treatment method for production of scintillator single crystal, and method for production of scintillator single crystalKURATA YASUSHI·Filed 2008·Granted Apr 7, 2015·9 cites·9 claims
- 1478US8728232B2Single crystal heat treatment methodUSUI TATSUYA·Filed 2006·Granted May 20, 2014·5 cites·8 claims
- 1577US5690731AMethod of growing single crystalHITACHI CHEMICAL CO LTD·Filed 1995·Granted Nov 25, 1997·32 cites·11 claims
- 1676US7838482B2CMP polishing compound and polishing methodHITACHI CHEMICAL CO LTD·Filed 2004·Granted Nov 23, 2010·15 cites·9 claims
- 1774US7232529B1Polishing compound for chemimechanical polishing and polishing methodHITACHI CHEMICAL CO LTD·Filed 2000·Granted Jun 19, 2007·14 cites·6 claims
- 1874US2024336810A1Polishing liquid for cmp, polishing liquid set for cmp and polishing methodRESONAC CORP·Filed 2022·Application pending·0 cites
- 1974US2025115795A1Polishing liquid for cmp, polishing liquid set for cmp, and polishing methodRESONAC CORP·Filed 2022·Application pending·0 cites
- 2074US2024336809A1Polishing liquid for cmp, polishing liquid set for cmp, and polishing methodRESONAC CORP·Filed 2022·Application pending·0 cites
- 2173US7744666B2Polishing medium for chemical-mechanical polishing, and method of polishing substrate memberHITACHI CHEMICAL CO LTD·Filed 2005·Granted Jun 29, 2010·4 cites·56 claims
- 2271US8616936B2Abrasive, method of polishing target member and process for producing semiconductor deviceYOSHIDA MASATO·Filed 2012·Granted Dec 31, 2013·1 cites·17 claims
- 2371US8168541B2CMP polishing slurry and polishing methodFUKASAWA MASATO·Filed 2010·Granted May 1, 2012·2 cites·16 claims
- 2471US8137159B2Abrasive, method of polishing target member and process for producing semiconductor deviceYOSHIDA MASATO·Filed 2011·Granted Mar 20, 2012·1 cites·25 claims
- 2571US7115021B2Abrasive, method of polishing target member and process for producing semiconductor deviceHITACHI CHEMICAL CO LTD·Filed 2002·Granted Oct 3, 2006·8 cites·20 claims
- 2670US9714262B2Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photovoltaic cell element, method of producing photovoltaic cell element and photovoltaic cellHITACHI CHEMICAL CO LTD·Filed 2013·Granted Jul 25, 2017·1 cites·8 claims
- 2770US7163644B2CMP abrasive, liquid additive for CMP abrasive and method for polishing substrateHITACHI CHEMICAL CO LTD·Filed 2004·Granted Jan 16, 2007·8 cites·9 claims
- 2869US2015069298A1Scintillator single crystal, heat treatment process for production of scintillator single crystal, and process for production of scintillator single crystalHITACHI CHEMICAL CO LTD·Filed 2014·Application pending·0 cites
- 2968US8162725B2Abrasive, method of polishing target member and process for producing semiconductor deviceYOSHIDA MASATO·Filed 2007·Granted Apr 24, 2012·1 cites·20 claims
- 3068US7963825B2Abrasive, method of polishing target member and process for producing semiconductor deviceHITACHI CHEMICAL CO LTD·Filed 2008·Granted Jun 21, 2011·1 cites·21 claims
- 3168US7871308B2Abrasive, method of polishing target member and process for producing semiconductor deviceHITACHI CHEMICAL CO LTD·Filed 2006·Granted Jan 18, 2011·1 cites·30 claims
- 3266US2015228812A1Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photololtaic cell element, method of producing photovoltaic cell element, and photovoltaic cellHITACHI CHEMICAL CO LTD·Filed 2013·Application pending·0 cites
- 3364US7708788B2Cerium oxide abrasive and method of polishing substratesHITACHI CHEMICAL CO LTD·Filed 2004·Granted May 4, 2010·6 cites·12 claims
- 3463US7799688B2Polishing fluid and method of polishingHITACHI CHEMICAL CO LTD·Filed 2003·Granted Sep 21, 2010·8 cites·11 claims
- 3562US9293344B2Cmp polishing slurry and method of polishing substrateFUKASAWA MASATO·Filed 2005·Granted Mar 22, 2016·2 cites·16 claims
- 3662US7311855B2Polishing slurry for chemical mechanical polishing and method for polishing substrateHITACHI CHEMICAL CO LTD·Filed 2003·Granted Dec 25, 2007·7 cites·6 claims
- 3761US8696929B2Polishing slurry and polishing methodKURATA YASUSHI·Filed 2007·Granted Apr 15, 2014·1 cites·11 claims
- 3860US8231735B2Polishing slurry for chemical mechanical polishing and method for polishing substrateHAGA KOUJI·Filed 2007·Granted Jul 31, 2012·1 cites·5 claims
- 3958US2016118513A1Composition for forming electrode, photovoltaic cell element and photovoltatic cellHITACHI CHEMICAL CO LTD·Filed 2013·Application pending·0 cites
- 4057US2010327227A1Scintillator single crystal, heat treatment process for production of scintillator single crystal, and process for production of scintillator single crystalHITACHI CHEMICAL CO LTD·Filed 2010·Application pending·0 cites
- 4156US2013042912A1Solder bonded body, method of producing solder bonded body, element, photovoltaic cell, method of producing element and method of producing photovoltaic cellHITACHI CHEMICAL CO LTD·Filed 2012·Application pending·0 cites
- 4256US2025263582A1Polishing liquid, polishing method, component manufacturing method, and semiconductor component manufacturing methodRESONAC CORP·Filed 2022·Application pending·0 cites
- 4355US2016211389A1Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photov oltaic cell element, method of producing photovoltaic cell element, and photovoltaic cellHITACHI CHEMICAL CO LTD·Filed 2016·Application pending·0 cites
- 4454US2014158196A1Element and photovoltaic cellKURIHARA YOSHIAKI·Filed 2012·Application pending·0 cites
- 4552US7867303B2Cerium oxide abrasive and method of polishing substratesHITACHI CHEMICAL CO LTD·Filed 2006·Granted Jan 11, 2011·0 cites·45 claims
- 4652US2006197054A1CMP abrasive, liquid additive for CMP abrasive and method for polishing substrateHITACHI CHEMICAL CO LTD·Filed 2006·Application pending·0 cites
- 4752US2006186372A1CMP abrasive, liquid additive for CMP abrasive and method for polishing substrateHITACHI CHEMICAL CO LTD·Filed 2006·Application pending·0 cites
- 4851US2007190906A1Polishing medium for chemical-mechanical polishing, and polishing methodUCHIDA TAKESHI·Filed 2007·Application pending·0 cites
- 4950US2015179829A1Composition for forming passivation layer, semiconductor substrate with passivation layer, method of producing semiconductor substrate with passivation layer, photovoltaic cell element, method of producing photovoltaic cell element and photovoltaic cellHITACHI CHEMICAL CO LTD·Filed 2013·Application pending·0 cites
- 5050US2005269295A1CMP abrasive, liquid additive for CMP abrasive and method for polishing substrateHITACHI CHEMICAL CO LTD·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →