Inventor · disambiguated record
Ya-Lien Lee
Also filed as: LEE YA-LIEN
47 granted patents·11 pending applications·452 citations·filing 2012–2025
97Inventor score
Top patents by PatentIndex Score
58 records- 0197US8736056B2Device for reducing contact resistance of a metalLEE YA-LIEN·Filed 2012·Granted May 27, 2014·399 cites·15 claims
- 0294US11676898B2Diffusion barrier for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·4 cites·16 claims
- 0394US10312098B2Method of forming an interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·6 cites·20 claims
- 0491US8962473B2Method of forming hybrid diffusion barrier layer and semiconductor device thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 24, 2015·10 cites·19 claims
- 0589US10079176B2Method of using a barrier-seed tool for forming fine pitched metal interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 18, 2018·4 cites·20 claims
- 0686US11961761B2Mitigating pattern collapseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 16, 2024·1 cites·20 claims
- 0785US12354958B2Semiconductor devices and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 8, 2025·1 cites·21 claims
- 0885US10163644B2Interconnect structure including a conductive feature and a barrier layer on sidewalls and a bottom surface of the conductive feature and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 25, 2018·4 cites·20 claims
- 0983US9209072B2Global dielectric and barrier layerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 8, 2015·4 cites·20 claims
- 1082US11908697B2Interconnect structure having a carbon-containing barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 1182US10867800B2Method of forming an interconnect structure having a carbon-containing barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 15, 2020·1 cites·20 claims
- 1282US2024258163A1Mitigating pattern collapseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1382US2024404953A1Diffusion barrier layer for conductive via to decrease contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1481US10354914B2Global dielectric and barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·2 cites·20 claims
- 1580US12368103B2Diffusion barrier layer for conductive via to decrease contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 1680US11362035B2Diffusion barrier layer for conductive via to decrease contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·1 cites·20 claims
- 1780US9659856B2Two step metallization formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 23, 2017·4 cites·20 claims
- 1878US12315809B2Via for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 1978US12068194B2Selective deposition of metal barrier in damascene processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 2077US2025279364A1Via for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2176US11851749B2Semiconductor device, method and machine of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 2276US11742291B2Diffusion barrier layer for conductive via to decrease contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·20 claims
- 2376US11527411B2Interconnect structure having a carbon-containing barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 2476US2024093357A1Semiconductor Device, Method and Machine of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2576US2024363403A1Selective deposition of metal barrier in damascene processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2675US2025349612A1Selective metal cap in an interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2774US11062909B2Interconnect structure having a carbon-containing barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·0 cites·20 claims
- 2873US11398406B2Selective deposition of metal barrier in damascene processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 26, 2022·2 cites·20 claims
- 2973US10043706B2Mitigating pattern collapseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 7, 2018·2 cites·17 claims
- 3073US9214383B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·3 cites·20 claims
- 3173US2025349611A1Low contact resistance vias in backend interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3272US11837500B2Selective deposition of metal barrier in damascene processes and the structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
- 3372US9892963B2Device and method for reducing contact resistance of a metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 13, 2018·1 cites·20 claims
- 3472US2024387381A1Semiconductor devices and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3571US9159666B2Device and method for reducing contact resistance of a metalTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 13, 2015·1 cites·20 claims
- 3670US9941199B2Two step metallization formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 10, 2018·1 cites·20 claims
- 3768US2025087533A1Low contact resistance vias in backend interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3867US10529575B2Interconnect structure having a carbon-containing barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 7, 2020·0 cites·20 claims
- 3966US11810857B2Via for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 7, 2023·0 cites·20 claims
- 4066US11177168B2Device and method for reducing contact resistance of a metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
- 4166US9818834B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·1 cites·20 claims
- 4264US11345991B2Semiconductor device, method and machine of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 31, 2022·0 cites·20 claims
- 4364US11183424B2Barrier layer formation for conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·0 cites·19 claims
- 4464US11043416B2Gradient atomic layer depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 22, 2021·0 cites·20 claims
- 4564US11043413B2Barrier layer formation for conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·0 cites·19 claims
- 4664US2022367376A1Diffusion Barrier for Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4762US11145542B2Global dielectric and barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·0 cites·20 claims
- 4862US10276431B2Device and method for reducing contact resistance of a metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·0 cites·20 claims
- 4961US2019027404A1Method of Using a Barrier-Seed Tool for Forming Fine Pitched Metal InterconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Application pending·0 cites
- 5060US10950495B2Mitigating pattern collapseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 16, 2021·0 cites·20 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →