Inventor · disambiguated record
Yao-Hsiang Liang
Also filed as: LIANG YAO-HSIANG
39 granted patents·9 pending applications·104 citations·filing 2001–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD33TAIWAN SEMICONDUCTOR MFG13LIANG YAO HSIANG1WANG HUNG-CHIH1
Top patents by PatentIndex Score
48 records- 0191US10134801B2Method of forming deep trench isolation in radiation sensing substrate and image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 20, 2018·7 cites·20 claims
- 0291US8722531B1Barrier layer for copper interconnectTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 13, 2014·13 cites·21 claims
- 0383US11417700B2Image sensing device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·1 cites·20 claims
- 0483US10074594B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 11, 2018·4 cites·20 claims
- 0583US2024379727A1Method of Forming Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0682US10475847B2Semiconductor device having stress-neutralized film stack and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 12, 2019·2 cites·20 claims
- 0782US8778801B2Method for forming seed layer structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 15, 2014·8 cites·13 claims
- 0881US10741601B2Image sensing device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·2 cites·20 claims
- 0981US8673765B2Method and apparatus for back end of line semiconductor device processingWANG HUNG-CHIH·Filed 2012·Granted Mar 18, 2014·9 cites·20 claims
- 1080US9966304B2Method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 8, 2018·3 cites·20 claims
- 1180US8872342B2Barrier layer for copper interconnectTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 28, 2014·4 cites·22 claims
- 1280US6394886B1Conformal disk holder for CMP pad conditionerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 28, 2002·23 cites·20 claims
- 1379US12142628B2Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 1478US9691804B2Image sensing device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 27, 2017·2 cites·20 claims
- 1576US11404470B2Method of forming deep trench isolation in radiation sensing substrate and image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 2, 2022·0 cites·20 claims
- 1676US9006900B2Semiconductor device with advanced pad structure resistant to plasma damage and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 14, 2015·3 cites·20 claims
- 1772US2025300005A1Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1871US2025323144A1Conductive structures and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1969US12341055B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 2066US11387274B2Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 12, 2022·0 cites·20 claims
- 2164US12362273B2Conductive structures and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 2264US11158659B2Semiconductor device structure with anti-acid layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 26, 2021·1 cites·17 claims
- 2363US7772625B2Image sensor having an RPO layer containing nitrogenTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 10, 2010·1 cites·7 claims
- 2462US10510798B2Method of forming deep trench isolation in radiation sensing substrate and image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·20 claims
- 2561US11603602B2Method for controlling electrochemical deposition to avoid defects in interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 2660US6561744B2Wafer blade for wafer pick-up from a water tank and method for usingTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 13, 2003·7 cites·20 claims
- 2758US11854980B2Method for forming titanium nitride barrier with small surface grains in interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·0 cites·20 claims
- 2857US11015260B2Method for controlling electrochemical deposition to avoid defects in interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·0 cites·11 claims
- 2956US10157953B2Image sensing device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·20 claims
- 3056US2024392463A1Semiconductor electrochemical plating apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3155US9064934B2Barrier layer for copper interconnectTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 23, 2015·0 cites·20 claims
- 3255US6595841B2Apparatus for holding wafer cassettes in a cassette tub during a chemical mechanical polishing processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 22, 2003·6 cites·10 claims
- 3355US2024355870A1Capacitor structure including a buffer layer and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3454US10867889B2Method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 3554US9666545B2Semiconductor device with advanced pad structure resistant to plasma damage and metnod for forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 30, 2017·0 cites·20 claims
- 3654US6672950B2Contamination prevention system and methodTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jan 6, 2004·6 cites·19 claims
- 3753US9196674B2Insulation layer to improve capacitor breakdown voltageTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 24, 2015·0 cites·20 claims
- 3853US2024387379A1Method and apparatus for copper plating in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3952US9991204B2Through via structure for step coverage improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 5, 2018·0 cites·20 claims
- 4051US9385081B2Semiconductor device with advanced pad structure resistant to plasma damage and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 5, 2016·0 cites·20 claims
- 4148US10796996B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 6, 2020·0 cites·20 claims
- 4248US2015001720A1Interconnect Structure and Method for Forming Interconnect StructureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Application pending·0 cites
- 4347US9711454B2Through via structure for step coverage improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·0 cites·15 claims
- 4440US8742540B2Insulation layer to improve capacitor breakdown voltageLIANG YAO HSIANG·Filed 2005·Granted Jun 3, 2014·0 cites·16 claims
- 4540US2014264872A1Metal Capping Layer for Interconnect ApplicationsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Application pending·0 cites
- 4639US9859124B2Method of manufacturing semiconductor device with recessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 2, 2018·0 cites·20 claims
- 4738US2017170215A1Semiconductor device structure with anti-acid layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Application pending·0 cites
- 4837US6783441B2Apparatus and method for transferring a torque from a rotating hub frame to a one-piece hub shaftTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 31, 2004·2 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →