Inventor · disambiguated record
Yan-Jie Liao
Also filed as: LIAO YAN-JIE
10 granted patents·9 pending applications·5 citations·filing 2019–2025
81Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD19
Top patents by PatentIndex Score
19 records- 0197US11856862B2Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0293US11456330B2Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 27, 2022·3 cites·20 claims
- 0386US12232424B2Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 0482US2025312823A1Transducer device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0581US2024375146A1Transducer Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0680US2024373753A1Integrated heater (and related method) to recover degraded piezoelectric device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0779US2025048660A1Getter layer for hydrogen in a mim deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0878US12082505B2Integrated heater (and related method) to recover degraded piezoelectric device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 0978US2024290541A1Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1075US2025295037A1Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1173US12166067B2Titanium layer as getter layer for hydrogen in a MIM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 1273US11984261B2Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 1372US2023372970A1Transducer device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1472US2023381815A1Transducer device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1566US11730058B2Integrated heater (and related method) to recover degraded piezoelectric device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 15, 2023·0 cites·20 claims
- 1662US11107630B2Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·20 claims
- 1760US11322580B2Titanium layer as getter layer for hydrogen in a MIM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 3, 2022·0 cites·20 claims
- 1847US11289568B2Reduction of electric field enhanced moisture penetration by metal shieldingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 29, 2022·0 cites·20 claims
- 1946US2023320227A1Method for manufacturing semiconductor structure and semiconductor structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →