Inventor · disambiguated record
Ya-Hsiu Lin
Also filed as: LIN YA-HSIU
5 granted patents·4 citations·filing 2018–2022
70Inventor score
Technology areasH10P
Files withTAIWAN SEMICONDUCTOR MFG CO LTD5
Top patents by PatentIndex Score
5 records- 0180US10741450B2Semiconductor device having a metal gate and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·2 cites·20 claims
- 0277US11901237B2Semiconductor device having cut gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 0373US10868003B2Creating devices with multiple threshold voltages by cut-metal-gate processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·20 claims
- 0471US10461078B2Creating devices with multiple threshold voltage by cut-metal-gate processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·1 cites·20 claims
- 0570US11437278B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →