Inventor · disambiguated record
Yaocheng Liu
Also filed as: LIU YAOCHENG
28 granted patents·9 pending applications·543 citations·filing 2001–2012
96Inventor score
Top patents by PatentIndex Score
37 records- 0198US8217423B2Structure and method for mobility enhanced MOSFETs with unalloyed silicideLIU YAOCHENG·Filed 2007·Granted Jul 10, 2012·97 cites·8 claims
- 0298US7696000B2Low defect Si:C layer with retrograde carbon profileIBM·Filed 2006·Granted Apr 13, 2010·124 cites·16 claims
- 0398US7524740B1Localized strain relaxation for strained Si directly on insulatorIBM·Filed 2008·Granted Apr 28, 2009·70 cites·2 claims
- 0495US6835488B2Fuel cell with patterned electrolyte/electrode interfaceHONDA MOTOR CO LTD·Filed 2001·Granted Dec 28, 2004·100 cites·22 claims
- 0594US7888197B2Method of forming stressed SOI FET having doped glass box layer using sacrificial stressed layerIBM·Filed 2007·Granted Feb 15, 2011·29 cites·18 claims
- 0694US7279758B1N-channel MOSFETs comprising dual stressors, and methods for forming the sameIBM·Filed 2006·Granted Oct 9, 2007·24 cites·7 claims
- 0793US8642434B2Structure and method for mobility enhanced MOSFETS with unalloyed silicideLIU YAOCHENG·Filed 2012·Granted Feb 4, 2014·14 cites·14 claims
- 0888US7714358B2Semiconductor structure and method of forming the structureIBM·Filed 2007·Granted May 11, 2010·12 cites·19 claims
- 0980US7932144B2Semiconductor structure and method of forming the structureIBM·Filed 2010·Granted Apr 26, 2011·4 cites·19 claims
- 1080US7709910B2Semiconductor structure for low parasitic gate capacitanceIBM·Filed 2007·Granted May 4, 2010·8 cites·4 claims
- 1177US7598147B2Method of forming CMOS with Si:C source/drain by laser melting and recrystallizationIBM·Filed 2007·Granted Oct 6, 2009·5 cites·20 claims
- 1275US7498243B2Crystalline-type device and approach thereforUNIV LELAND STANFORD JUNIOR·Filed 2004·Granted Mar 3, 2009·25 cites·35 claims
- 1375US7473608B2N-channel MOSFETs comprising dual stressors, and methods for forming the sameIBM·Filed 2007·Granted Jan 6, 2009·4 cites·18 claims
- 1474US7615435B2Semiconductor device and method of manufactureIBM·Filed 2007·Granted Nov 10, 2009·4 cites·1 claims
- 1573US6991868B2Fuel cell assemblyHONDA MOTOR CO LTD·Filed 2001·Granted Jan 31, 2006·10 cites·13 claims
- 1671US7741658B2Self-aligned super stressed PFETIBM·Filed 2007·Granted Jun 22, 2010·3 cites·12 claims
- 1769US7632724B2Stressed SOI FET having tensile and compressive device regionsIBM·Filed 2007·Granted Dec 15, 2009·4 cites·20 claims
- 1864US7655551B2Control of poly-Si depletion in CMOS via gas phase dopingIBM·Filed 2008·Granted Feb 2, 2010·1 cites·12 claims
- 1962US7675118B2Semiconductor structure with enhanced performance using a simplified dual stress liner configurationIBM·Filed 2006·Granted Mar 9, 2010·2 cites·22 claims
- 2060US7838932B2Raised STI structure and superdamascene technique for NMOSFET performance enhancement with embedded silicon carbonIBM·Filed 2008·Granted Nov 23, 2010·1 cites·12 claims
- 2160US7473594B2Raised STI structure and superdamascene technique for NMOSFET performance enhancement with embedded silicon carbonIBM·Filed 2006·Granted Jan 6, 2009·1 cites·7 claims
- 2257US7485519B2After gate fabrication of field effect transistor having tensile and compressive regionsIBM·Filed 2007·Granted Feb 3, 2009·1 cites·12 claims
- 2352US9059316B2Structure and method for mobility enhanced MOSFETs with unalloyed silicideLIU YAOCHENG·Filed 2012·Granted Jun 16, 2015·0 cites·15 claims
- 2450US7473626B2Control of poly-Si depletion in CMOS via gas phase dopingIBM·Filed 2006·Granted Jan 6, 2009·0 cites·1 claims
- 2548US7169498B2Fuel cell and method for making the sameUNIV STANFORD·Filed 2003·Granted Jan 30, 2007·0 cites·5 claims
- 2647US2009181508A1Method and Structure For NFET With Embedded Silicon CarbonIBM·Filed 2008·Application pending·0 cites
- 2746US7504309B2Pre-silicide spacer removalIBM·Filed 2006·Granted Mar 17, 2009·0 cites·6 claims
- 2846US2009166770A1Method of fabricating gate electrode for gate of mosfet and structure thereofIBM·Filed 2008·Application pending·0 cites
- 2945US7273671B2Fuel cell and method for making the sameUNIV STANFORD·Filed 2001·Granted Sep 25, 2007·0 cites·9 claims
- 3045US2008248626A1Shallow trench isolation self-aligned to templated recrystallization boundaryIBM·Filed 2007·Application pending·0 cites
- 3145US2008206965A1STRAINED SILICON MADE BY PRECIPITATING CARBON FROM Si(1-x-y)GexCy ALLOYIBM·Filed 2007·Application pending·0 cites
- 3245US2008246041A1METHOD OF FABRICATING SOI nMOSFET AND THE STRUCTURE THEREOFIBM·Filed 2007·Application pending·0 cites
- 3344US7667263B2Semiconductor structure including doped silicon carbon liner layer and method for fabrication thereofIBM·Filed 2007·Granted Feb 23, 2010·0 cites·14 claims
- 3443US2007275532A1Optimized deep source/drain junctions with thin poly gate in a field effect transistorIBM·Filed 2006·Application pending·0 cites
- 3543US2007238267A1Epitaxy of Silicon-Carbon Substitutional Solid Solutions by Ultra-Fast Annealing of Amorphous MaterialIBM·Filed 2006·Application pending·0 cites
- 3640US2007235759A1CMOS process with Si gates for nFETs and SiGe gates for pFETsIBM·Filed 2006·Application pending·0 cites
- 3740US2008050863A1Semiconductor structure including multiple stressed layersIBM·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →