Inventor · disambiguated record
Yasushi Nanishi
Also filed as: NANISHI YASUSHI
5 granted patents·1 pending application·214 citations·filing 1983–2005
85Inventor score
Top patents by PatentIndex Score
6 records- 0186US6146916AMethod for forming a GaN-based semiconductor light emitting deviceMURATA MANUFACTURING CO·Filed 1998·Granted Nov 14, 2000·72 cites·12 claims
- 0285US6362496B1Semiconductor light emitting device having a GaN-based semiconductor layer, method for producing the same and method for forming a GaN-based semiconductor layerMURATA MANUFACTURING CO·Filed 2000·Granted Mar 26, 2002·30 cites·5 claims
- 0380US6458614B1Opto-electronic integrated circuitMURATA MANUFACTURING CO·Filed 1999·Granted Oct 1, 2002·79 cites·19 claims
- 0470US4528061AProcess for manufacturing boron-doped gallium arsenide single crystalNIPPON TELEGRAPH & TELEPHONE·Filed 1983·Granted Jul 9, 1985·16 cites·7 claims
- 0552US6593596B1Semiconductor light emitting device and method for adjusting the luminous intensity thereofMURATA MANUFACTURING CO·Filed 1999·Granted Jul 15, 2003·17 cites·5 claims
- 0640US2009072239A1Gallium oxide single crystal composite, process for producing the same, and process for producing nitride semiconductor film utilizing gallium oxide single crystal compositeOOHIRA SHIGEO·Filed 2005·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Yasushi Nanishi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →