Inventor · disambiguated record
Yasunobu Nashimoto
Also filed as: NASHIMOTO YASUNOBU
12 granted patents·1 pending application·402 citations·filing 1991–2002
93Inventor score
Top patents by PatentIndex Score
13 records- 0194US6100571AFet having non-overlapping field control electrode between gate and drainNEC CORP·Filed 1999·Granted Aug 8, 2000·151 cites·20 claims
- 0291US6483135B1Field effect transistorNEC COMPOUND SEMICONDUCTOR·Filed 1999·Granted Nov 19, 2002·93 cites·21 claims
- 0374US6069094AMethod for depositing a thin filmHIDEKI MATSUMRA·Filed 1997·Granted May 30, 2000·41 cites·13 claims
- 0460US6723664B2Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junctionMATSUMURA HIDEKI·Filed 2002·Granted Apr 20, 2004·6 cites·2 claims
- 0560US6349669B1Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junctionMATSUMURA HIDEKI·Filed 1998·Granted Feb 26, 2002·21 cites·13 claims
- 0660US5500381AFabrication method of field-effect transistorNEC CORP·Filed 1995·Granted Mar 19, 1996·21 cites·16 claims
- 0757US5206528ACompound semiconductor field effect transistor having a gate insulator formed of insulative superlattice layerNEC CORP·Filed 1991·Granted Apr 27, 1993·18 cites·15 claims
- 0853US5698897ASemiconductor device having a plated heat sinkNEC CORP·Filed 1996·Granted Dec 16, 1997·15 cites·8 claims
- 0952US5821154ASemiconductor deviceNEC CORP·Filed 1997·Granted Oct 13, 1998·14 cites·8 claims
- 1042US5661318AJunction type field-effect transistorNEC CORP·Filed 1995·Granted Aug 26, 1997·8 cites·26 claims
- 1141US5726494ASemiconductor device having a plated heat sinkNEC CORP·Filed 1997·Granted Mar 10, 1998·7 cites·18 claims
- 1240US6242765B1Field effect transistor and its manufacturing methodNEC CORP·Filed 1995·Granted Jun 5, 2001·7 cites·7 claims
- 1336US2003006437A1Field effect transistorNEC CORP·Filed 2002·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Yasunobu Nashimoto files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →