Inventor · disambiguated record
Yasutoshi Okuno
Also filed as: OKUNO YASUTOSHI
119 granted patents·27 pending applications·765 citations·filing 1994–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD89MATSUSHITA ELECTRIC INDUSTRIAL CO LTD19TEXAS INSTRUMENTS INC11TAIWAN SEMICONDUCTOR MFG10PANASONIC CORP5
Top patents by PatentIndex Score
146 records- 0197US12029023B2Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 2, 2024·2 cites·20 claims
- 0297US11855177B2Field effect transistors with dual silicide contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·3 cites·20 claims
- 0397US11605633B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·3 cites·20 claims
- 0497US11482458B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·5 cites·20 claims
- 0595US11637108B2Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·2 cites·20 claims
- 0695US10854716B2Semiconductor device with source/drain contact formed using bottom-up depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·8 cites·20 claims
- 0794US6110842AMethod of forming multiple gate oxide thicknesses using high density plasma nitridationTEXAS INSTRUMENTS INC·Filed 1998·Granted Aug 29, 2000·132 cites·15 claims
- 0893US9202788B2Multi-layer semiconductor device structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 1, 2015·12 cites·17 claims
- 0992US11990376B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·1 cites·20 claims
- 1092US11417764B2Interface profile control in epitaxial structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·2 cites·20 claims
- 1192US11233134B2Field effect transistors with dual silicide contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 25, 2022·5 cites·20 claims
- 1290US11018142B2Memory cell and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·4 cites·20 claims
- 1390US10867905B2Interconnect structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·5 cites·20 claims
- 1490US8766379B2Multi-layer scavenging metal gate stack for ultra-thin interfacial dielectric layerLIU KUAN-TING·Filed 2011·Granted Jul 1, 2014·17 cites·15 claims
- 1590US2025331147A1Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1689US8872284B2FinFET with metal gate stressorKELLY ANDREW JOSEPH·Filed 2012·Granted Oct 28, 2014·8 cites·20 claims
- 1788US12408316B2Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
- 1888US2025324632A1Field effect transistors with dual silicide contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1987US10978354B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·3 cites·20 claims
- 2087US9647115B1Semiconductor structure with enhanced contact and method of manufacture the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·6 cites·20 claims
- 2187US9601626B2Semiconductor device including fin structure with two channel layers and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·4 cites·20 claims
- 2287US9240484B2FinFET with metal gate stressorTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jan 19, 2016·4 cites·17 claims
- 2387US5616515ASilicon oxide germanium resonant tunnelingTEXAS INSTRUMENTS INC·Filed 1995·Granted Apr 1, 1997·114 cites·6 claims
- 2486US10998241B2Selective dual silicide formation using a maskless fabrication process flowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 4, 2021·3 cites·20 claims
- 2586US9093335B2Calculating carrier concentrations in semiconductor Fins using probed resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 28, 2015·5 cites·20 claims
- 2686US6033953AMethod for manufacturing dielectric capacitor, dielectric memory deviceTEXAS INSTRUMENTS INC·Filed 1997·Granted Mar 7, 2000·84 cites·25 claims
- 2785US12439623B2Field effect transistors with dual silicide contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 2885US12272602B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 8, 2025·0 cites·20 claims
- 2985US11749682B2Selective dual silicide formation using a maskless fabrication process flowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·1 cites·20 claims
- 3085US10847413B2Method of forming contact plugs for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·3 cites·20 claims
- 3185US10700066B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·2 cites·20 claims
- 3285US9627280B2Methods for probing semiconductor fins through four-point probe and determining carrier concentrationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·3 cites·20 claims
- 3384US12266688B2Semiconductor device with source/drain contact formed using bottom-up depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 3484US10964542B2Selective high-K formation in gate-last processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·2 cites·20 claims
- 3583US12027372B2Contact structures with deposited silicide layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 2, 2024·0 cites·20 claims
- 3683US7196346B2Semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Mar 27, 2007·23 cites·5 claims
- 3783US2024312786A1Contact Structures With Deposited Silicide LayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3882US10763114B2Method of fabricating gate oxide of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 1, 2020·2 cites·20 claims
- 3982US5466949ASilicon oxide germanium resonant tunnelingTEXAS INSTRUMENTS INC·Filed 1994·Granted Nov 14, 1995·43 cites·5 claims
- 4081US9194804B2Stress analysis of 3-D structures using tip-enhanced Raman scattering technologyTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 24, 2015·3 cites·20 claims
- 4180US11984450B2Semiconductor device having spacer residueTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·0 cites·20 claims
- 4280US11798945B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 4380US7202147B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Apr 10, 2007·7 cites·6 claims
- 4480US2025203976A1Semiconductor device with source/drain contact formed using bottom-up depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4579US11728414B2Semiconductor device including a Fin-FET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 4679US11018012B2Contact structures with deposited silicide layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·1 cites·20 claims
- 4779US10515849B2Semiconductor device, interconnection structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·2 cites·20 claims
- 4879US9893056B2Multi-layer semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 13, 2018·2 cites·20 claims
- 4979US2024379457A1Method for manufacturing a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5079US2024363751A1Interface profile control in epitaxial structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 146 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →