Inventor · disambiguated record
Yanbiao Pan
Also filed as: PAN YANBIAO
8 granted patents·6 pending applications·13 citations·filing 2018–2025
80Inventor score
Top patents by PatentIndex Score
14 records- 0194US11195958B2Semiconductor device with deep trench isolation and trench capacitorTEXAS INSTRUMENTS INC·Filed 2020·Granted Dec 7, 2021·3 cites·17 claims
- 0291US11676961B2Semiconductor device with low noise transistor and low temperature coefficient resistorTEXAS INSTRUMENTS INC·Filed 2020·Granted Jun 13, 2023·2 cites·20 claims
- 0389US10811543B2Semiconductor device with deep trench isolation and trench capacitorTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 20, 2020·6 cites·10 claims
- 0488US11222986B2Semiconductor device with an integrated deep trench capacitor having high capacitance density and low equivalent series resistanceTEXAS INSTRUMENTS INC·Filed 2020·Granted Jan 11, 2022·2 cites·20 claims
- 0578US12317583B2Semiconductor device with low noise transistor and low temperature coefficient resistorTEXAS INSTRUMENTS INC·Filed 2023·Granted May 27, 2025·0 cites·26 claims
- 0678US2025267930A1Semiconductor device with low noise transistor and low temperature coefficient resistorTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 0773US2024312984A1Carbon and/or Oxygen Doped Polysilicon ResistorTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0870US12464737B2Polysilicon resistors with high sheet resistanceTEXAS INSTRUMENTS INC·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 0970US12027515B2Carbon and/or oxygen doped polysilicon resistorTEXAS INSTRUMENTS INC·Filed 2021·Granted Jul 2, 2024·0 cites·20 claims
- 1065US11742436B2Semiconductor device with an integrated deep trench capacitor having high capacitance density and low equivalent series resistanceTEXAS INSTRUMENTS INC·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 1156US2025221015A1Integrated deep trench high-k capacitor and methodTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 1254US2025006836A1Semiconductor device with nitrogen doped field relief dielectric layerTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 1351US2024112947A1Shallow trench isolation (sti) processing with local oxidation of silicon (locos)TEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 1448US2022238516A1Polysilicon resistor using reduced grain size polysiliconPAN YANBIAO·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →