Inventor · disambiguated record
Yasukazu Seki
Also filed as: SEKI YASUKAZU
23 granted patents·497 citations·filing 1983–2017
96Inventor score
Top patents by PatentIndex Score
23 records- 0191US4565588AMethod for diffusion of impuritiesFUJI ELECTRIC RES·Filed 1984·Granted Jan 21, 1986·85 cites·18 claims
- 0289US5789311AManufacturing method of SiC Schottky diodeFUJI ELECTRIC CO LTD·Filed 1995·Granted Aug 4, 1998·84 cites·5 claims
- 0387US5032888AConductivity modulation buried gate trench type MOSFETFUJI ELECTRIC CO LTD·Filed 1990·Granted Jul 16, 1991·71 cites·16 claims
- 0476US9825145B2Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technologyFUJI ELECTRIC CO LTD·Filed 2016·Granted Nov 21, 2017·2 cites·15 claims
- 0576US9659775B2Method for doping impurities, method for manufacturing semiconductor deviceUNIV KYUSHU NAT UNIV CORP·Filed 2016·Granted May 23, 2017·2 cites·24 claims
- 0670US4692782ASemiconductor radioactive ray detectorFUJI ELECTRIC RES·Filed 1984·Granted Sep 8, 1987·27 cites·4 claims
- 0765US5034336AMethod of producing insulated gate bipolar tranistorFUJI ELECTRIC CO LTD·Filed 1990·Granted Jul 23, 1991·28 cites·7 claims
- 0864US4671651ASolid-state optical temperature measuring deviceFUJI ELECTRIC RES·Filed 1983·Granted Jun 9, 1987·23 cites·6 claims
- 0963US5025293AConductivity modulation type MOSFETFUJI ELECTRIC CO LTD·Filed 1990·Granted Jun 18, 1991·23 cites·8 claims
- 1060US4914047AMethod of producing insulated gate MOSFET employing polysilicon maskFUJI ELECTRIC CO LTD·Filed 1989·Granted Apr 3, 1990·26 cites·8 claims
- 1159US5349212ASemiconductor device having thyristor structureFUJI ELECTRIC CO LTD·Filed 1993·Granted Sep 20, 1994·19 cites·10 claims
- 1259US4896200ANovel semiconductor-based radiation detectorFUJI ELECTRIC CO LTD·Filed 1988·Granted Jan 23, 1990·17 cites·6 claims
- 1359US4618381AMethod for adding impurities to semiconductor base materialFUJI ELECTRIC RES·Filed 1984·Granted Oct 21, 1986·24 cites·13 claims
- 1454US10109501B2Manufacturing method of semiconductor device having a voltage resistant structureFUJI ELECTRIC CO LTD·Filed 2017·Granted Oct 23, 2018·0 cites·3 claims
- 1554US9786749B2Semiconductor device having a voltage resistant structureFUJI ELECTRIC CO LTD·Filed 2016·Granted Oct 10, 2017·0 cites·9 claims
- 1652US5532502AConductivity-modulated-type MOSFETFUJI ELECTRIC CO LTD·Filed 1995·Granted Jul 2, 1996·14 cites·2 claims
- 1749US4901124AConductivity modulated MOSFETFUJI ELECTRIC CO LTD·Filed 1989·Granted Feb 13, 1990·12 cites·1 claims
- 1847US4762803AProcess for forming crystalline films by glow dischargeFUJI ELECTRIC CO LTD·Filed 1985·Granted Aug 9, 1988·14 cites·10 claims
- 1944US4835587ASemiconductor device for detecting radiationFUJI ELECTRIC CO LTD·Filed 1987·Granted May 30, 1989·8 cites·7 claims
- 2038US4689649ASemiconductor radiation detectorFUJI ELECTRIC CO LTD·Filed 1985·Granted Aug 25, 1987·5 cites·6 claims
- 2137US5068581AHorizontal deflection circuit for high-frequency scanningFUJI ELECTRIC CO LTD·Filed 1990·Granted Nov 26, 1991·5 cites·12 claims
- 2235US4611224ASemiconductor radiation detectorFUJI ELECTRIC RES·Filed 1984·Granted Sep 9, 1986·5 cites·3 claims
- 2330US4627991AMethod for forming a protective film on a semiconductor bodyFUJI ELECTRIC RES·Filed 1984·Granted Dec 9, 1986·3 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →