Inventor · disambiguated record
Yanwei Shi
Also filed as: SHI YANWEI
8 granted patents·11 pending applications·22 citations·filing 2010–2025
76Inventor score
Top patents by PatentIndex Score
19 records- 0174US2024389331A1Peripheral circuit having recess gate transistors and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0271US8583253B1Implantable neurostimulation system and method for estimating electrode impedance values for neurostimulation systemsSHI YANWEI·Filed 2010·Granted Nov 12, 2013·22 cites·9 claims
- 0368US12362223B2Semiconductor structure, fabrication method and three-dimensional memoryYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·18 claims
- 0468US12089413B2Peripheral circuit having recess gate transistors and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
- 0568US2025079236A1Semiconductor devices and methods for fabricating the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0664US2025351337A1Gate structures in three-dimensional semiconductive devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0762US2025324603A1Semiconductor devices and fabricating methods thereof and memoriesYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0860US12183623B2Semiconductor devices and methods for fabricating the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·20 claims
- 0959US12376307B2Semiconductor structure, fabrication method and three-dimensional memoryYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 1059US2025331173A1Semiconductor devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1158US12278209B2Peripheral circuit having recess gate transistors and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 15, 2025·0 cites·20 claims
- 1258US2025287580A1Semiconductor device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1356US2024407168A1Semiconductor device and fabrication method thereof, memory systemYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1454US2024164117A1Semiconductor devices and fabrication methods thereof, memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 1553US12446265B2Semiconductor devices and methods for manufacturing the same, and NAND memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 1652US12324198B2Semiconductor device and manufacture method thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jun 3, 2025·0 cites·20 claims
- 1748US2024315056A1Peripheral circuit assemblies, memory systems and fabrication methods of memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1845US2025048705A1Semiconductor apparatus, fabrication method thereof and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1931US2017359185A1Method for loading website security information and browser apparatusBEIJING QIHOO TECHNOLOGY CO·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →