Inventor · disambiguated record
Yali Song
Also filed as: SONG YALI
33 granted patents·10 pending applications·47 citations·filing 2019–2025
95Inventor score
Top patents by PatentIndex Score
43 records- 0195US10991438B1Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Apr 27, 2021·7 cites·20 claims
- 0295US10950623B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Mar 16, 2021·9 cites·11 claims
- 0393US11404441B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 2, 2022·2 cites·10 claims
- 0492US11710529B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jul 25, 2023·2 cites·22 claims
- 0589US10957409B1Method of performing programming operation and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 23, 2021·3 cites·20 claims
- 0688US2025024679A13d nand memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0787US11430811B23D NAND memory device with select gate cutYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 30, 2022·1 cites·14 claims
- 0886US12262539B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·19 claims
- 0986US11062782B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 13, 2021·2 cites·20 claims
- 1086US2025273277A1Memory including a plurality of portions and used for reducing program disturbance and program method thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1185US10998049B1Method of programming memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted May 4, 2021·6 cites·15 claims
- 1285US10957408B1Non-volatile memory device and control methodYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Mar 23, 2021·6 cites·16 claims
- 1383US11276467B2Method of programming memory device and related memory device having a channel-stacked structureYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 15, 2022·2 cites·10 claims
- 1481US11825656B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 21, 2023·0 cites·13 claims
- 1578US2024096428A1Memory including a plurality of portions and used for reducing program disturbance and program method thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1677US11875862B2Memory including a plurality of portions and used for reducing program disturbance and program method thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Jan 16, 2024·0 cites·20 claims
- 1777US2025308598A1Programming method for semiconductor device and semiconductor deviceYANGTZE MEMORY ECHNOLOGIES CO LTD·Filed 2025·Application pending·0 cites
- 1874US11848058B2Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 19, 2023·0 cites·20 claims
- 1974US10885990B1Method of performing programming operation and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jan 5, 2021·3 cites·20 claims
- 2074US2024062837A1Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 2173US12176043B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 2272US11594288B2Memory including a plurality of portions and used for reducing program disturbance and program method thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
- 2372US11568941B2Memory including a plurality of portions and used for reducing program disturbance and program method thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·14 claims
- 2472US10943665B1Method of programming and verifying memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Mar 9, 2021·2 cites·15 claims
- 2570US10892023B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jan 12, 2021·2 cites·10 claims
- 2668US11195590B2Memory including a plurality of portions and used for reducing program disturbance and program method thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Dec 7, 2021·0 cites·5 claims
- 2767US11626170B2Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 2864US12354668B2Programming method for semiconductor device and semiconductor deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 2964US11423995B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 23, 2022·0 cites·20 claims
- 3062US2024365544A1Three-dimensional memories, manufacturing methods thereof, and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 3161US12237025B2Memory device, memory system, and program operation method thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 3261US11257545B2Method of programming memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Feb 22, 2022·0 cites·14 claims
- 3360US11205494B2Non-volatile memory device and control methodYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 21, 2021·0 cites·18 claims
- 3459US11398284B2Method of performing programming operation and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 26, 2022·0 cites·20 claims
- 3558US12260096B2Method of reducing Vpass disturb in 3D nand systemsYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 3658US11721403B2Method of programming and verifying memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·16 claims
- 3757US2025232816A1Memory devices and operation methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 3855US11864379B2Three-dimensional memory and control method thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·14 claims
- 3947US2023238067A1Method of programming and verifying memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4046US2025046376A1Memory device and method of performing a programming operationYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4145US12165716B2Method of performing programming operation and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·19 claims
- 4245US2024321364A1Operation method of memory device, memory device, memory system, and electronic apparatusYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4344US11670373B2Three-dimensional memory device programming with reduced threshold voltage shiftYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →