Inventor · disambiguated record
Yan Sun
Also filed as: SUN YAN · Sun yan lin
3 granted patents·32 pending applications·5 citations·filing 2017–2024
57Inventor score
Files withQUALCOMM INC32ADVANCED MICRO DEVICES INC1SEMICONDUCTOR MFG INT SHANGHAI CORP1SHANGHAI PACIFIC HAT MFG CO LTD1
Top patents by PatentIndex Score
35 records- 0167US10855222B2Clock synthesizer with integrated voltage droop detection and clock stretchingADVANCED MICRO DEVICES INC·Filed 2018·Granted Dec 1, 2020·2 cites·20 claims
- 0263US2025096130A1Gate-all-around field effect transistor structuresQUALCOMM INC·Filed 2024·Application pending·0 cites
- 0362US11033063B2Reversible beanie with a pom-pomSHANGHAI PACIFIC HAT MFG CO LTD·Filed 2017·Granted Jun 15, 2021·3 cites·20 claims
- 0461US2025357343A1Cell height reduction using a deep power rail processQUALCOMM INC·Filed 2024·Application pending·0 cites
- 0561US2025301762A1Adjacent logic cells having back-to-back viasQUALCOMM INC·Filed 2024·Application pending·0 cites
- 0661US2025300004A1Epi-epi dielectric trench wallQUALCOMM INC·Filed 2024·Application pending·0 cites
- 0760US2025212482A1Pass-through structuresQUALCOMM INC·Filed 2023·Application pending·0 cites
- 0860US2025374670A1Track stealing for standard cell height compactionQUALCOMM INC·Filed 2024·Application pending·0 cites
- 0959US2025151346A1Diode structure for direct backside contact, backside power delivery networkQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1059US2025098204A1Gate-tie-down in backside power architecture using contact jumper and backside contactQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1159US2025098302A1Compact logic cells using full backside connectivityQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1259US2025098217A1Gate-all-around field effect transistor structuresQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1359US2025212513A1Selective deep recess source/drain structure for direct backside power rail contactQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1459US2025275215A1Deeply recessed top metal gate for gate-all-around field effect transistorQUALCOMM INC·Filed 2024·Application pending·0 cites
- 1559US2025210519A1Gate-all-around and forksheet device architecture in standard cellsQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1659US2025248101A1Top sacrificial ribbon structure for gate all around device architectureQUALCOMM INC·Filed 2024·Application pending·0 cites
- 1759US2025098267A1Backside bi-directional interconnectQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1859US2025098301A1Gate-tie-down in backside power architecture using trench-tie-down schemeQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1959US2025248100A1Variable stack nanosheet devices and methods for making the sameQUALCOMM INC·Filed 2024·Application pending·0 cites
- 2059US2025212481A1Forksheet device architecture in standard cellsQUALCOMM INC·Filed 2023·Application pending·0 cites
- 2159US2025212457A1Recessed source/drain epitaxial structure for direct backside contactQUALCOMM INC·Filed 2023·Application pending·0 cites
- 2258US2025098256A1Self-aligned backside interconnectQUALCOMM INC·Filed 2023·Application pending·0 cites
- 2358US2025098221A1Complementary field effect transistor (cfet) circuits with vertical routing structuresQUALCOMM INC·Filed 2023·Application pending·0 cites
- 2458US2025151253A1Memory cell structures using backside metal cross-couple structuresQUALCOMM INC·Filed 2023·Application pending·0 cites
- 2558US2025098220A1Complementary field effect transistor (cfet) circuits and methods for making the sameQUALCOMM INC·Filed 2023·Application pending·0 cites
- 2658US2025151386A1Complementary field effect transistor (cfet) circuits with direct vertical connectors and methods for making the sameQUALCOMM INC·Filed 2023·Application pending·0 cites
- 2758US2025185300A1Electronic devices employing thin-gate insulator transistors coupled to varactors to reduce gate-to-source/drain voltage to avoid voltage breakdown, and related fabrication methodsQUALCOMM INC·Filed 2023·Application pending·0 cites
- 2857US2025096075A1Memory cell structures using full backside connectivityQUALCOMM INC·Filed 2023·Application pending·0 cites
- 2956US2025386534A1Shallow trench isolation (sti) free structures for advanced semiconductor technologiesQUALCOMM INC·Filed 2024·Application pending·0 cites
- 3055US2024371924A1Enhanced-shaped extension region(s) for gate-all-around (gaa) field effect transistor (fet) device, and related fabrication methodsQUALCOMM INC·Filed 2023·Application pending·0 cites
- 3155US2024429236A1Variable vertical-stack nanosheet for gate-all-around devicesQUALCOMM INC·Filed 2023·Application pending·0 cites
- 3255US2024421209A1Semiconductor devices with different gate dielectric thicknessesQUALCOMM INC·Filed 2023·Application pending·0 cites
- 3355US2024429300A1GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING FETs WITH DIFFERENT CRYSTALLINE ORIENTATION CHANNELS THROUGH A SUBSTRATEQUALCOMM INC·Filed 2023·Application pending·0 cites
- 3455US2025212524A1Hybrid high-performance cell with backside contactQUALCOMM INC·Filed 2023·Application pending·0 cites
- 3534US10192868B2Semiconductor device and operation thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Jan 29, 2019·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →