Inventor · disambiguated record
Yasuhiko Taito
Also filed as: TAITO YASUHIKO
37 granted patents·3 pending applications·1,058 citations·filing 1996–2023
98Inventor score
Top patents by PatentIndex Score
40 records- 0199US7173857B2Nonvolatile semiconductor memory device capable of uniformly inputting/outputting dataRENESAS TECH CORP·Filed 2005·Granted Feb 6, 2007·414 cites·4 claims
- 0289US6768354B2Multi-power semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2001·Granted Jul 27, 2004·38 cites·24 claims
- 0389US6700434B2Substrate bias voltage generating circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Mar 2, 2004·39 cites·15 claims
- 0487US6414881B1Semiconductor device capable of generating internal voltage effectivelyMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 2, 2002·45 cites·20 claims
- 0586US7030681B2Semiconductor device with multiple power sourcesRENESAS TECH CORP·Filed 2002·Granted Apr 18, 2006·45 cites·5 claims
- 0684US6856550B2Nonvolatile semiconductor memory device capable of uniformly inputting/outputting dataRENESAS TECH CORP·Filed 2002·Granted Feb 15, 2005·31 cites·10 claims
- 0784US6472926B2Internal voltage generation circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 29, 2002·49 cites·18 claims
- 0880US6008674ASemiconductor integrated circuit device with adjustable high voltage detection circuitMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 28, 1999·46 cites·6 claims
- 0980US5872476ALevel converter circuit generating a plurality of positive/negative voltagesMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 16, 1999·38 cites·4 claims
- 1080US5828604ANon-volatile semiconductor memory device having large margin of readout operation for variation in external power supply voltageMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 27, 1998·46 cites·12 claims
- 1179US6515461B2Voltage downconverter circuit capable of reducing current consumption while keeping response rateMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 4, 2003·27 cites·34 claims
- 1276US7779333B2Semiconductor memory having embedded microcomputer with ECC functionRENESAS TECH CORP·Filed 2007·Granted Aug 17, 2010·11 cites·16 claims
- 1375US7630242B2Nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2008·Granted Dec 8, 2009·6 cites·8 claims
- 1472US6429729B2Semiconductor integrated circuit device having circuit generating reference voltageMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 6, 2002·20 cites·4 claims
- 1572US6373763B1Semiconductor memory provided with data-line equalizing circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 16, 2002·20 cites·16 claims
- 1672US2024126472A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1771US7428174B2Semiconductor flash memoryRENESAS TECH CORP·Filed 2007·Granted Sep 23, 2008·6 cites·2 claims
- 1871US6781431B2Clock generating circuitRENESAS TECH CORP·Filed 2003·Granted Aug 24, 2004·21 cites·8 claims
- 1969US6614270B2Potential detecting circuit having wide operating margin and semiconductor device including the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 2, 2003·18 cites·18 claims
- 2069US6501326B2Semiconductor integrated circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Dec 31, 2002·17 cites·16 claims
- 2168US9747990B2Semiconductor device and control method of the semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Aug 29, 2017·2 cites·12 claims
- 2268US6424134B2Semiconductor integrated circuit device capable of stably generating internal voltage independent of an external power supply voltageMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 23, 2002·17 cites·20 claims
- 2367US7251165B2Semiconductor flash memoryRENESAS TECH CORP·Filed 2004·Granted Jul 31, 2007·12 cites·2 claims
- 2465US6304120B1Buffer circuit operating with a small through current and potential detecting circuit using the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 16, 2001·20 cites·18 claims
- 2564US7414912B2Semiconductor flash memoryRENESAS TECH CORP·Filed 2007·Granted Aug 19, 2008·4 cites·6 claims
- 2662US6049243AVoltage level converter circuit improved in operation reliabilityMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Apr 11, 2000·15 cites·7 claims
- 2761US6643214B2Semiconductor memory device having write column select gateMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Nov 4, 2003·12 cites·6 claims
- 2861US6317368B1Semiconductor integrated circuit device tested in batchesMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 13, 2001·12 cites·16 claims
- 2960US2022382483A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 3048US6344766B1Voltage level converter circuit improved in operation reliabilityMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 5, 2002·4 cites·8 claims
- 3146US6777707B2Semiconductor integrated circuit with voltage down converter adaptable for burn-in testingRENESAS TECH CORP·Filed 2002·Granted Aug 17, 2004·5 cites·10 claims
- 3245US10102913B2Semiconductor device and control method of the semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Oct 16, 2018·0 cites·20 claims
- 3345US6198331B1Voltage level converter circuit improved in operation reliabilityMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Mar 6, 2001·3 cites·4 claims
- 3445US5852583ASemiconductor memory device that can realize high speed data read outMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 22, 1998·9 cites·6 claims
- 3541US6424579B1Semiconductor memory device with internal power supply potential generation circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 23, 2002·3 cites·11 claims
- 3640US6781894B2Semiconductor memory device achieving fast random accessRENESAS TECH CORP·Filed 2003·Granted Aug 24, 2004·2 cites·4 claims
- 3739US10366758B2Storage device and storage methodRENESAS ELECTRONICS CORP·Filed 2018·Granted Jul 30, 2019·0 cites·9 claims
- 3837US6665217B2Semiconductor memory device including internal power circuit having tuning functionMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Dec 16, 2003·1 cites·17 claims
- 3935US2002033725A1Clock generating circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 4034US6593642B2Semiconductor device provided with potential transmission lineMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 15, 2003·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →