Inventor · disambiguated record
Yasuhiko Takemura
Also filed as: TAKEMURA YASUHIKO
565 granted patents·15 pending applications·40,840 citations·filing 1980–2025
99Inventor score
Files withSEMICONDUCTOR ENERGY LAB493TAKEMURA YASUHIKO39JAPAN SYNTHETIC RUBBER CO LTD19YAMAZAKI SHUNPEI9TOKYO SHIBAURA ELECTRIC CO7
Top patents by PatentIndex Score
580 records- 0199US9929350B2Light-emitting deviceYAMAZAKI SHUNPEI·Filed 2012·Granted Mar 27, 2018·26 cites·25 claims
- 0299US8547753B2Semiconductor deviceTAKEMURA YASUHIKO·Filed 2011·Granted Oct 1, 2013·86 cites·40 claims
- 0399US6198133B1Electro-optical device having silicon nitride interlayer insulating filmSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Mar 6, 2001·452 cites·77 claims
- 0499US6118502AUsing a temporary substrate to attach components to a display substrate when fabricating a passive type display deviceSEMICONDUCTOR ENERGY LAB·Filed 1998·Granted Sep 12, 2000·397 cites·22 claims
- 0599US5757456ADisplay device and method of fabricating involving peeling circuits from one substrate and mounting on otherSEMICONDUCTOR ENERGY LAB·Filed 1996·Granted May 26, 1998·612 cites·20 claims
- 0699US5719065AMethod for manufacturing semiconductor device with removable spacersSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Feb 17, 1998·240 cites·16 claims
- 0799US5705829ASemiconductor device formed using a catalyst element capable of promoting crystallizationSEMICONDUCTOR ENERGY LAB·Filed 1996·Granted Jan 6, 1998·365 cites·17 claims
- 0899US5663077AMethod of manufacturing a thin film transistor in which the gate insulator comprises two oxide filmsSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Sep 2, 1997·376 cites·14 claims
- 0999US5650636AActive matrix display and electrooptical deviceSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Jul 22, 1997·237 cites·28 claims
- 1099US5648277AMethod of manufacturing a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Jul 15, 1997·419 cites·7 claims
- 1199US5639698ASemiconductor, semiconductor device, and method for fabricating the sameSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Jun 17, 1997·504 cites·64 claims
- 1299US5616506ASemiconductor device having a crystallized silicon thin film in which the crystallization direction is oriented either vertically or horizontally to the current flow directionSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Apr 1, 1997·360 cites·18 claims
- 1399US5608232ASemiconductor, semiconductor device, and method for fabricating the sameSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Mar 4, 1997·518 cites·21 claims
- 1499US5589694ASemiconductor device having a thin film transistor and thin film diodeSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Dec 31, 1996·279 cites·25 claims
- 1599US5569610AMethod of manufacturing multiple polysilicon TFTs with varying degrees of crystallinitySEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Oct 29, 1996·418 cites·13 claims
- 1699US5534716ASemiconductor device having transistors with different orientations of crystal channel growth with respect to current carrier directionSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Jul 9, 1996·359 cites·16 claims
- 1799US5529937AProcess for fabricating thin film transistorSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Jun 25, 1996·609 cites·56 claims
- 1899US5508209AMethod for fabricating thin film transistor using anodic oxidationSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Apr 16, 1996·290 cites·18 claims
- 1999US5501989AMethod of making semiconductor device/circuit having at least partially crystallized semiconductor layerSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Mar 26, 1996·409 cites·15 claims
- 2099US5485019ASemiconductor device and method for forming the sameSEMICONDUCTOR ENERGY LAB·Filed 1993·Granted Jan 16, 1996·282 cites·16 claims
- 2199US5403772AMethod for manufacturing semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1993·Granted Apr 4, 1995·683 cites·27 claims
- 2299US5349366AElectro-optical device and process for fabricating the same and method of driving the sameSEMICONDUCTOR ENERGY LAB·Filed 1992·Granted Sep 20, 1994·380 cites·21 claims
- 2399US5313076AThin film transistor and semiconductor device including a laser crystallized semiconductorSEMICONDUCTOR ENERGY LAB·Filed 1992·Granted May 17, 1994·309 cites·16 claims
- 2499US5308998AInsulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrodeSEMICONDUCTOR ENERGY LAB·Filed 1992·Granted May 3, 1994·469 cites·11 claims
- 2598US11139301B2Semiconductor device including side surface conductor contactSEMICONDUCTOR ENERGY LAB·Filed 2020·Granted Oct 5, 2021·4 cites·20 claims
- 2698US9472683B2Field effect transistorSEMICONDUCTOR ENERGY LAB·Filed 2016·Granted Oct 18, 2016·28 cites·17 claims
- 2798US9281412B2Field effect transistorSEMICONDUCTOR ENERGY LAB·Filed 2015·Granted Mar 8, 2016·34 cites·17 claims
- 2898US8754409B2Field-effect transistor, and memory and semiconductor circuit including the sameYAMAZAKI SHUNPEI·Filed 2012·Granted Jun 17, 2014·33 cites·23 claims
- 2998US7569856B2Semiconductor device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2005·Granted Aug 4, 2009·56 cites·23 claims
- 3098US7446843B2Display device and method of fabricating the sameSEMICONDUCTOR ENERGY LAB·Filed 2007·Granted Nov 4, 2008·64 cites·12 claims
- 3198US7381599B2Semiconductor device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2005·Granted Jun 3, 2008·69 cites·39 claims
- 3298US7301209B2Semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2006·Granted Nov 27, 2007·55 cites·48 claims
- 3398US7050138B1Method of manufacturing a display device having a driver circuit attached to a display substrateSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted May 23, 2006·177 cites·27 claims
- 3498US6476447B1Active matrix display device including a transistorSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Nov 5, 2002·154 cites·24 claims
- 3598US6023308AActive matrix device with two TFT's per pixel driven by a third TFT with a crystalline silicon channelSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Feb 8, 2000·218 cites·25 claims
- 3698US6013928ASemiconductor device having interlayer insulating film and method for forming the sameSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Jan 11, 2000·247 cites·70 claims
- 3798US5962897ASemiconductor device and method for forming the sameSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Oct 5, 1999·150 cites·26 claims
- 3898US5962872ASemiconductor device and method for fabricating the sameSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Oct 5, 1999·220 cites·18 claims
- 3998US5956579ASemiconductor, semiconductor device, and method for fabricating the sameSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Sep 21, 1999·250 cites·27 claims
- 4098US5897347ASemiconductor, semiconductor device, and method for fabricating the sameSEMICONDUCTOR ENERGY LAB·Filed 1996·Granted Apr 27, 1999·324 cites·60 claims
- 4198US5828429AElectro-optical device and method of driving with voltage supply lines parallel to gate lines and two transistors per pixelSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Oct 27, 1998·245 cites·16 claims
- 4298US5818070AElectro-optical device incorporating a peripheral dual gate electrode TFT driver circuitSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Oct 6, 1998·260 cites·25 claims
- 4398US5739549AThin film transistor having offset regionSEMICONDUCTOR ENERGY LAB·Filed 1996·Granted Apr 14, 1998·211 cites·18 claims
- 4498US5656825AThin film transistor having crystalline semiconductor layer obtained by irradiationSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Aug 12, 1997·298 cites·53 claims
- 4598US5646424ATransistor device employing crystallization catalystSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Jul 8, 1997·306 cites·31 claims
- 4698US5644147AElectro-optical device incorporating pixel transistors with plural gate electrodesSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Jul 1, 1997·221 cites·18 claims
- 4798US5637515AMethod of making thin film transistor using lateral crystallizationSEMICONDUCTOR ENERGY LAB·Filed 1996·Granted Jun 10, 1997·313 cites·14 claims
- 4898US5627084AMethod for fabricating MIS semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted May 6, 1997·142 cites·14 claims
- 4998US5614733ASemiconductor device having crystalline thin film transistorsSEMICONDUCTOR ENERGY LAB CO IN·Filed 1994·Granted Mar 25, 1997·345 cites·13 claims
- 5098US5604137AMethod for forming a multilayer integrated circuitSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Feb 18, 1997·306 cites·11 claims
Showing the top 50 of 580 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →