Inventor · disambiguated record
Yasuhiro Taniguchi
Also filed as: TANIGUCHI YASUHIRO
63 granted patents·7 pending applications·907 citations·filing 1997–2022
99Inventor score
Top patents by PatentIndex Score
70 records- 0195US9318196B1Non-volatile semiconductor memory deviceFLOADIA CORP·Filed 2015·Granted Apr 19, 2016·22 cites·15 claims
- 0295US7095432B2Image processing apparatus and methodTOSHIBA KK·Filed 2002·Granted Aug 22, 2006·140 cites·42 claims
- 0395US6569742B1Method of manufacturing semiconductor integrated circuit device having silicide layersHITACHI LTD·Filed 1999·Granted May 27, 2003·125 cites·36 claims
- 0491US7313026B2Semiconductor deviceRENESAS TECH CORP·Filed 2005·Granted Dec 25, 2007·22 cites·24 claims
- 0590US7119406B2Semiconductor integrated circuit device having deposited layer for gate insulationRENESAS TECH CORP·Filed 2005·Granted Oct 10, 2006·11 cites·26 claims
- 0689US7601581B2Method of manufacturing a semiconductor deviceRENESAS TECH CORP·Filed 2007·Granted Oct 13, 2009·14 cites·21 claims
- 0789US6376316B2Method for manufacturing semiconductor integrated circuit device having deposited layer for gate insulationHITACHI LTD·Filed 1998·Granted Apr 23, 2002·46 cites·32 claims
- 0888US8351254B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2010·Granted Jan 8, 2013·9 cites·11 claims
- 0987US7321839B2Method and apparatus for calibration of camera system, and method of manufacturing camera systemTOSHIBA KK·Filed 2006·Granted Jan 22, 2008·9 cites·21 claims
- 1086US7166893B2Semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2002·Granted Jan 23, 2007·24 cites·46 claims
- 1186US6646313B2Semiconductor integrated circuit device and having deposited layer for gate insulationHITACHI LTD·Filed 2001·Granted Nov 11, 2003·23 cites·31 claims
- 1283US9502109B2Non-volatile semiconductor storage deviceFLOADIA CORP·Filed 2013·Granted Nov 22, 2016·7 cites·5 claims
- 1382US11011530B2Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage deviceFLOADIA CORP·Filed 2019·Granted May 18, 2021·2 cites·6 claims
- 1482US9437736B2Non-volatile semiconductor memory deviceFLOADIA CORP·Filed 2014·Granted Sep 6, 2016·8 cites·6 claims
- 1581US6617632B2Semiconductor device and a method of manufacturing the sameHITACHI LTD·Filed 2001·Granted Sep 9, 2003·34 cites·14 claims
- 1681US6576512B2Method of manufacturing an EEPROM deviceHITACHI LTD·Filed 2002·Granted Jun 10, 2003·16 cites·8 claims
- 1780US7844921B2Interface apparatus and interface methodTOSHIBA KK·Filed 2007·Granted Nov 30, 2010·19 cites·10 claims
- 1880US6559012B2Method for manufacturing semiconductor integrated circuit device having floating gate and deposited filmHITACHI LTD·Filed 2001·Granted May 6, 2003·16 cites·32 claims
- 1979US11282878B2Solid-state imaging device and camera systemFLOADIA CORP·Filed 2018·Granted Mar 22, 2022·2 cites·13 claims
- 2079US7268401B2Semiconductor integrated circuit device having deposited layer for gate insulationRENESAS TECH CORP·Filed 2006·Granted Sep 11, 2007·4 cites·3 claims
- 2178US10102911B2Non-volatile semiconductor storage device for reducing the number of memory cells arranged along a control to which a memory gate voltage is appliedFLOADIA CORP·Filed 2015·Granted Oct 16, 2018·3 cites·10 claims
- 2278US6387744B2Process for manufacturing semiconductor integrated circuit deviceHITACHI LTD·Filed 2001·Granted May 14, 2002·23 cites·33 claims
- 2376US10074660B2Semiconductor memory deviceFLOADIA CORP·Filed 2016·Granted Sep 11, 2018·3 cites·13 claims
- 2476US8304820B2Semiconductor device utilizing dummy gate to enhance processing precisionYAMAKOSHI HIDEAKI·Filed 2011·Granted Nov 6, 2012·5 cites·8 claims
- 2573US6908837B2Method of manufacturing a semiconductor integrated circuit device including a gate electrode having a salicide layer thereonRENESAS TECH CORP·Filed 2002·Granted Jun 21, 2005·10 cites·19 claims
- 2672US10680001B2Non-volatile semiconductor memory deviceFLOADIA CORP·Filed 2015·Granted Jun 9, 2020·2 cites·10 claims
- 2771US7023062B2Semiconductor integrated circuit device having deposited layer for gate insulationRENESAS TECH CORP·Filed 2003·Granted Apr 4, 2006·9 cites·6 claims
- 2870US9842650B2Non-volatile SRAM memory cell, and non-volatile semiconductor storage deviceFLOADIA CORP·Filed 2015·Granted Dec 12, 2017·3 cites·9 claims
- 2970US7402873B2Semiconductor integrated circuit device having deposited layer for gate insulationRENESAS TECH CORP·Filed 2007·Granted Jul 22, 2008·2 cites·8 claims
- 3069US6211003B1Semiconductor integrated circuit device and process for manufacturing the sameHITACHI LTD·Filed 1999·Granted Apr 3, 2001·33 cites·39 claims
- 3167US8076191B2Method for manufacturing a semiconductor device including memory cell formation regionYAMAKOSHI HIDEAKI·Filed 2010·Granted Dec 13, 2011·3 cites·16 claims
- 3267US5991428AMoving object detection apparatus and methodTOSHIBA KK·Filed 1997·Granted Nov 23, 1999·73 cites·10 claims
- 3364US10381446B2Memory cell and non-volatile semiconductor storage deviceFLOADIA CORP·Filed 2016·Granted Aug 13, 2019·1 cites·7 claims
- 3464US10276727B2Memory cell, semiconductor integrated circuit device, and method for manufacturing semiconductor integrated circuit deviceFLOADIA CORP·Filed 2016·Granted Apr 30, 2019·1 cites·12 claims
- 3564US6298143B1Moving target detecting system and moving target detecting methodTOSHIBA KK·Filed 1998·Granted Oct 2, 2001·61 cites·18 claims
- 3663US10038101B2Memory cell and non-volatile semiconductor storage deviceFLOADIA CORP·Filed 2015·Granted Jul 31, 2018·1 cites·4 claims
- 3763US8076192B2Method of manufacturing a semiconductor deviceTANIGUCHI YASUHIRO·Filed 2009·Granted Dec 13, 2011·3 cites·21 claims
- 3862US7124046B2Method and apparatus for calibration of camera system, and method of manufacturing camera systemTOSHIBA KK·Filed 2003·Granted Oct 17, 2006·7 cites·8 claims
- 3961US6456730B1Moving object detection apparatus and methodTOSHIBA KK·Filed 1999·Granted Sep 24, 2002·50 cites·22 claims
- 4060US9343166B2Non-volatile semiconductor storage deviceFLOADIA CORP·Filed 2013·Granted May 17, 2016·2 cites·12 claims
- 4160US7466599B2Semiconductor deviceRENESAS TECH CORP·Filed 2007·Granted Dec 16, 2008·3 cites·19 claims
- 4259US7123539B2Memory modules with magnetoresistive elements and method of reading data from row or column directionsTOSHIBA KK·Filed 2005·Granted Oct 17, 2006·1 cites·6 claims
- 4358US2025374541A1Non-volatile memory cell and non-volatile semiconductor storage deviceFLOADIA CORP·Filed 2022·Application pending·0 cites
- 4457USRE39550ESecurity apparatus and methodTOSHIBA KK·Filed 2001·Granted Apr 3, 2007·3 cites·44 claims
- 4556US10615168B2Memory cell, semiconductor integrated circuit device, and method for manufacturing semiconductor integrated circuit deviceFLOADIA CORP·Filed 2019·Granted Apr 7, 2020·0 cites·1 claims
- 4654US7550809B2Semiconductor integrated circuit device having deposited layer for gate insulationRENESAS TECH CORP·Filed 2007·Granted Jun 23, 2009·0 cites·12 claims
- 4753US9646979B2Non-volatile semiconductor storage deviceFLOADIA CORP·Filed 2013·Granted May 9, 2017·1 cites·11 claims
- 4851US2009154253A1semiconductor deviceSHIBA KAZUYOSHI·Filed 2008·Application pending·0 cites
- 4950US11100989B2Multiplier-accumulatorFLOADIA CORP·Filed 2019·Granted Aug 24, 2021·0 cites·10 claims
- 5050US10431589B2Memory cell, semiconductor integrated circuit device, and method for manufacturing semiconductor integrated circuit deviceFLOADIA CORP·Filed 2016·Granted Oct 1, 2019·0 cites·11 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →