Inventor · disambiguated record
Yasushi Terada
Also filed as: TERADA YASUSHI
37 granted patents·2,227 citations·filing 1985–1997
98Inventor score
Files withMITSUBISHI ELECTRIC CORP37
Top patents by PatentIndex Score
37 records- 0198US4811294AData integrity verifying circuit for electrically erasable and programmable read only memory (EEPROM)MITSUBISHI ELECTRIC CORP·Filed 1986·Granted Mar 7, 1989·203 cites·3 claims
- 0296US5745417AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 28, 1998·135 cites·26 claims
- 0395US5297096ANonvolatile semiconductor memory device and data erasing method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Mar 22, 1994·135 cites·55 claims
- 0495US5111427ANonvolatile content-addressable memory and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1989·Granted May 5, 1992·100 cites·15 claims
- 0594US5428568AElectrically erasable and programmable non-volatile memory device and a method of operating the sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 27, 1995·120 cites·13 claims
- 0694US5363330ANon-volatile semiconductor memory device incorporating data latch and address counter for page mode programmingMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 8, 1994·94 cites·6 claims
- 0794US4970727ASemiconductor integrated circuit having multiple self-test functions and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Nov 13, 1990·95 cites·8 claims
- 0894US4953129ANonvolatile semiconductor memory device capable of reliably writing data and a data writing method thereforMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Aug 28, 1990·90 cites·12 claims
- 0993US4903236ANonvolatile semiconductor memory device and a writing method thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Feb 20, 1990·81 cites·18 claims
- 1090US5371705AInternal voltage generator for a non-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 6, 1994·76 cites·51 claims
- 1190US5347490ANonvolatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Sep 13, 1994·77 cites·36 claims
- 1289US5898606AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 27, 1999·63 cites·2 claims
- 1389US4958317ANonvolatile semiconductor memory device and a writing method using electron tunnelingMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Sep 18, 1990·60 cites·10 claims
- 1488US5659505AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 19, 1997·67 cites·34 claims
- 1587US5283758ANon-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 1, 1994·67 cites·17 claims
- 1686US4733371ASemiconductor memory device with high voltage switchMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Mar 22, 1988·51 cites·3 claims
- 1785US5233610ASemiconductor memory device having error correcting functionMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Aug 3, 1993·109 cites·26 claims
- 1885US4805151ANonvolatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Feb 14, 1989·48 cites·7 claims
- 1984US4933906ANon-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jun 12, 1990·45 cites·13 claims
- 2084US4858194ANonvolatile semiconductor memory device using source of a single supply voltageMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Aug 15, 1989·44 cites·12 claims
- 2183US4813018ANonvolatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Mar 14, 1989·42 cites·4 claims
- 2282US5548557ANonvolatile semiconductor memory device with a row redundancy circuitMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 20, 1996·42 cites·39 claims
- 2379US5602778ANonvolatile semiconductor memory device with a row redundancy circuitMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 11, 1997·39 cites·3 claims
- 2479US5132928ADivided word line type non-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jul 21, 1992·78 cites·22 claims
- 2578US5544117ANon-volatile semiconductor memory device with improved collective erasing operationMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Aug 6, 1996·40 cites·26 claims
- 2677US5615149ANon-volatile semiconductor memory device incorporating data latch and address counter for page mode programmingMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 25, 1997·28 cites·6 claims
- 2775US5022009ASemiconductor memory device having reading operation of information by differential amplificationMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jun 4, 1991·31 cites·11 claims
- 2873US4694314ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1985·Granted Sep 15, 1987·29 cites·6 claims
- 2972US5402382ANonvolatile semiconductor memory device capable of erasing by a word line unitMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Mar 28, 1995·32 cites·24 claims
- 3071US4725983ANonvolatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Feb 16, 1988·27 cites·3 claims
- 3166US5105384ALow current semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Apr 14, 1992·21 cites·15 claims
- 3260US4760556ANonvolatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Jul 26, 1988·18 cites·7 claims
- 3358US5253210AParitioned bit line structure of EEPROM and method of reading data therefromMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 12, 1993·19 cites·20 claims
- 3445US5554868ANon-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Sep 10, 1996·10 cites·7 claims
- 3544US5521863ANon-volatile semiconductor memory device incorporating data latch and address counter for page mode programmingMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 28, 1996·6 cites·6 claims
- 3636US4691216ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1985·Granted Sep 1, 1987·5 cites·12 claims
- 3730US5485421ANon-volatile semiconductor memory device incorporating data latch and address counter for page mode programmingMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 16, 1996·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →