Inventor · disambiguated record
Yan-Ming Tsai
Also filed as: TSAI YAN-MING
25 granted patents·10 pending applications·31 citations·filing 2014–2025
93Inventor score
Top patents by PatentIndex Score
35 records- 0193US11348839B2Method of manufacturing semiconductor devices with multiple silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 31, 2022·5 cites·20 claims
- 0292US10535748B2Method of forming a contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·6 cites·20 claims
- 0391US9812451B2Field effect transistor contact with reduced contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·5 cites·20 claims
- 0485US10515963B2Field effect transistor contact with reduced contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·2 cites·20 claims
- 0585US9520327B2Methods of forming low resistance contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 13, 2016·4 cites·20 claims
- 0685US2025287628A1Contact with a Silicide RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0784US12218012B2Method of manufacturing semiconductor devices with multiple silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 0884US10269799B2Field effect transistor contact with reduced contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 0983US9165838B2Methods of forming low resistance contactsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 20, 2015·5 cites·20 claims
- 1080US2025063783A1Contact structure for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1179US12328890B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 1279US12107086B2Field effect transistor contact with reduced contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 1, 2024·0 cites·20 claims
- 1379US11810826B2Semiconductor devices with stacked silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
- 1477US2024332076A1Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1576US12166078B2Contact structure for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 1676US2025159965A1Method of manufacturing semiconductor devices with multiple silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1776US2025359183A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1875US12087642B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
- 1975US2024387288A1Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2073US11031286B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 8, 2021·1 cites·20 claims
- 2170US11411094B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 2269US12046510B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 2368US12432977B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 2468US11289482B2Field effect transistor contact with reduced contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 29, 2022·0 cites·20 claims
- 2568US11081563B2Formation of silicide contacts in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 3, 2021·1 cites·20 claims
- 2667US11676868B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 2765US11335774B2Contact structure for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 17, 2022·0 cites·19 claims
- 2861US11177172B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
- 2955US12439625B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 3055US10483164B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·0 cites·20 claims
- 3155US9129842B2Formation of silicide contacts in semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 8, 2015·0 cites·20 claims
- 3255US2024405023A1Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3351US2023402278A1Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3451US2023282729A1Work-Function Metal in Transistors and Method Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3530US2018337701A1System for improving received signal qualityWISTRON NEWEB CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →