Inventor · disambiguated record
Ya-Ching Tseng
Also filed as: TSENG YA-CHING
9 granted patents·8 pending applications·8 citations·filing 2020–2025
81Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD17
Top patents by PatentIndex Score
17 records- 0195US11694926B2Barrier free interface between beol interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 4, 2023·4 cites·20 claims
- 0294US11342222B2Self-aligned scheme for semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·3 cites·20 claims
- 0386US2025329584A1Self-aligned scheme for semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0482US2024404953A1Diffusion barrier layer for conductive via to decrease contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0580US12387977B2Self-aligned scheme for semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 0680US12368103B2Diffusion barrier layer for conductive via to decrease contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 0780US11362035B2Diffusion barrier layer for conductive via to decrease contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·1 cites·20 claims
- 0876US11742291B2Diffusion barrier layer for conductive via to decrease contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·20 claims
- 0975US11830770B2Self-aligned scheme for semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 1075US2025336677A1Etch Stop Region for Semiconductor Device Substrate ThinningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1174US12362235B2Barrier free interface between BEOL interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 1274US2024379412A1Homogeneous source/drain contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1373US2025300011A1Barrier free interface between beol interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1465US2024079239A1Etch Stop Region for Semiconductor Device Substrate ThinningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1562US12406877B2Homogeneous source/drain contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 2, 2025·0 cites·20 claims
- 1656US2025113538A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1753US2025096155A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →