Inventor · disambiguated record
Ya-Jui Tsou
Also filed as: TSOU YA-JUI
15 granted patents·8 pending applications·15 citations·filing 2019–2025
88Inventor score
Top patents by PatentIndex Score
23 records- 0196US11749328B2Magnetoresistive memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 5, 2023·3 cites·20 claims
- 0289US11605670B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 14, 2023·3 cites·20 claims
- 0388US12451175B2Memory device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·1 cites·20 claims
- 0488US11410714B2Magnetoresistive memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 9, 2022·6 cites·20 claims
- 0583US12315541B2Magnetoresistive memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 0683US2025366080A1Memory device with magnetic tunnel junctionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0782US12069965B2Method for manufacturing memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 0882US11411082B2Nanowire stack GAA device with selectable numbers of channel stripsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 9, 2022·2 cites·20 claims
- 0981US2025259662A1Magnetoresistive memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1079US2025056812A1Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1177US12100737B2Nanowire stack GAA device with selectable numbers of channel stripsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 1275US12160998B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 3, 2024·0 cites·20 claims
- 1375US11778923B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 1475US2025364025A1Memory device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1575US2024355912A1Memory device with magnetic tunnel junctionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1674US11742388B2Nanowire stack GAA device with selectable numbers of channel stripsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·20 claims
- 1774US2024341200A1Memory structure with ferromagnetic electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1871US12062713B2Memory device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 1970US12052934B2Memory structure and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 2063US2024212732A1Physically unclonable function cell and operation method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2163US2025133968A1Spin-orbit torque magnetoresistive memory structureNAT APPLIED RES LABORATORIES·Filed 2024·Application pending·0 cites
- 2261US11967351B2Physically unclonable function cell and operation method of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 23, 2024·0 cites·20 claims
- 2352US11177430B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →