Inventor · disambiguated record
Yasuhiko Tsukikawa
Also filed as: TSUKIKAWA YASUHIKO
41 granted patents·1 pending application·788 citations·filing 1989–2017
98Inventor score
Files withMITSUBISHI ELECTRIC CORP26RENESAS TECH CORP12ZENTEL JAPAN CORP2MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1MITSUBISHI DENKI KABISHIKI KAI1
Top patents by PatentIndex Score
42 records- 0193US5652725ASemiconductor memory device having a redundant row and a redundant column which can be accessed prior to substitutionMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 29, 1997·112 cites·7 claims
- 0291US5394365ACharge pump circuit having an improved charge pumping efficiencyMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 28, 1995·93 cites·20 claims
- 0389US5905690ASynchronous semiconductor device having circuitry capable of surely resetting test modeMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 18, 1999·83 cites·15 claims
- 0483US6061285ASemiconductor memory device capable of executing earlier command operation in test modeMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 9, 2000·52 cites·11 claims
- 0581US6867994B2Semiconductor memory device with memory cells arranged in high densityRENESAS TECH CORP·Filed 2003·Granted Mar 15, 2005·25 cites·10 claims
- 0677US7072204B2Semiconductor memory device having dummy word lineRENESAS TECH CORP·Filed 2005·Granted Jul 4, 2006·6 cites·9 claims
- 0776US7102935B2Semiconductor memory device driven with low voltageRENESAS TECH CORP·Filed 2004·Granted Sep 5, 2006·24 cites·5 claims
- 0876US6903961B2Semiconductor memory device having twin-cell unitsRENESAS TECH CORP·Filed 2003·Granted Jun 7, 2005·18 cites·16 claims
- 0974US6005434ASubstrate potential generation circuit that can suppress variation of output voltage with respect to change in external power supply voltage and environment temperatureMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 21, 1999·30 cites·27 claims
- 1073US6727738B2Configuration for generating a clock including a delay circuit and method thereofRENESAS TECH CORP·Filed 2001·Granted Apr 27, 2004·19 cites·14 claims
- 1172US5014646AMethod and apparatus for writing oxide filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted May 14, 1991·33 cites·32 claims
- 1270US7161387B2Semiconductor device and level conversion circuitRENESAS TECH CORP·Filed 2004·Granted Jan 9, 2007·12 cites·12 claims
- 1368US6687174B2Semiconductor memory device capable of switching output data widthRENESAS TECH CORP·Filed 2003·Granted Feb 3, 2004·14 cites·4 claims
- 1468US5696726AComplementary differential amplifier in which direct current amplification gain can be set arbitrarily and semiconductor memory divice using the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 9, 1997·28 cites·12 claims
- 1567US7288965B2Semiconductor device and level conversion circuitRENESAS TECH CORP·Filed 2006·Granted Oct 30, 2007·4 cites·2 claims
- 1667US6535412B1Semiconductor memory device capable of switching output data widthMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Mar 18, 2003·14 cites·8 claims
- 1766US5966316ASemiconductor memory device having storage capacity of 22N+1 bitsMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Oct 12, 1999·24 cites·6 claims
- 1864US5995427ASemiconductor memory device having test modeMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 30, 1999·23 cites·10 claims
- 1963US6735133B1Semiconductor memory circuit having normal operation mode and burn-in test modeRENESAS TECH CORP·Filed 2003·Granted May 11, 2004·13 cites·3 claims
- 2063US5905679ASemiconductor memory device clamping the overshoot and undershoot of input signal by circuit with PN junctionMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 18, 1999·22 cites·8 claims
- 2162US6121812ADelay circuit having delay time free from influence of operation environmentMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 19, 2000·21 cites·15 claims
- 2261US6469952B1Semiconductor memory device capable of reducing power supply voltage in a DRAM's word driverMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 22, 2002·12 cites·12 claims
- 2358US5448516ASemiconductor memory device suitable for high integrationMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Sep 5, 1995·18 cites·25 claims
- 2456US6269038B1Semiconductor memory device with test mode decision circuitMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 31, 2001·9 cites·8 claims
- 2556US6249462B1Data output circuit that can drive output data speedily and semiconductor memory device including such a data output circuitMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 19, 2001·9 cites·16 claims
- 2650US6717841B2Semiconductor memory device having nonvolatile memory cell of high operating stabilityRENESAS TECH CORP·Filed 2002·Granted Apr 6, 2004·6 cites·12 claims
- 2748US5982705ASemiconductor memory device permitting large output current from output bufferMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 9, 1999·11 cites·17 claims
- 2846US5751645ASemiconductor memory device with reduced output noiseMITSUBISHI ELECTRIC CORP·Filed 1997·Granted May 12, 1998·10 cites·8 claims
- 2944US6787859B2Semiconductor memory device with shortened connection length among memory block, data buffer and data busRENESAS TECH CORP·Filed 2002·Granted Sep 7, 2004·4 cites·7 claims
- 3044US5715212ASemiconductor memory device comprising address transition detecting circuit having stable response characteristic for address signal conversionMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 3, 1998·9 cites·7 claims
- 3143US10991418B2Semiconductor memory device comprising an interface conforming to JEDEC standard and control device thereforZENTEL JAPAN CORP·Filed 2017·Granted Apr 27, 2021·0 cites·33 claims
- 3242US6304496B1Semiconductor memory device with write driver reset functionMITSUBISHI DENKI KABISHIKI KAI·Filed 2000·Granted Oct 16, 2001·3 cites·13 claims
- 3339US5619457ADynamic semiconductor memory device that can control through current of input buffer circuit for external input/output control signalMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 8, 1997·7 cites·5 claims
- 3438US6285602B1Semiconductor memory device provided with I/O clamp circuitMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Sep 4, 2001·5 cites·9 claims
- 3538US6201748B1Semiconductor memory device having test modeMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Mar 13, 2001·2 cites·14 claims
- 3637US6934204B2Semiconductor device with reduced terminal input capacitanceRENESAS TECH CORP·Filed 2002·Granted Aug 23, 2005·1 cites·14 claims
- 3735US5761141ASemiconductor memory device and test method thereforMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 2, 1998·5 cites·4 claims
- 3834US11200945B2Semiconductor memory deviceZENTEL JAPAN CORP·Filed 2017·Granted Dec 14, 2021·0 cites·21 claims
- 3934US6700406B1Multi-valued logical circuit with less latch-upMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Mar 2, 2004·0 cites·5 claims
- 4034US5694352ASemiconductor memory device having layout area of periphery of output pad reducedMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 2, 1997·3 cites·4 claims
- 4134US5563840AIntegrated semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Oct 8, 1996·4 cites·3 claims
- 4231US2003193824A1Semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →