Inventor · disambiguated record
Yao-Jen Yang
Also filed as: YANG YAO-JEN
50 granted patents·28 pending applications·56 citations·filing 2018–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD78
Top patents by PatentIndex Score
78 records- 0198US11532752B2Non-volatile memory device with reduced areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·6 cites·20 claims
- 0297US10984878B1One-time programmable memory bit cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 20, 2021·10 cites·20 claims
- 0393US11018260B2Non-volatile memory device with reduced areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·6 cites·20 claims
- 0492US10163783B1Reduced area efuse cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·12 cites·20 claims
- 0590US12380959B2Memory device and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 0690US11443819B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 13, 2022·2 cites·20 claims
- 0788US11176969B2Memory circuit including a first program deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·5 cites·20 claims
- 0888US10923483B2EFuseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·4 cites·20 claims
- 0988US2025364066A1Integrated circuit including efuse cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1088US2025308607A1Memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1185US11803683B2Method of and system for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·1 cites·20 claims
- 1284US11785766B2E-fuseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·1 cites·20 claims
- 1383US2024370622A1Anti-fuse deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1483US2024357804A1Non-volatile memory device with reduced areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1582US12300603B2Modified fuse structure and method of useTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1682US12073169B2Anti-fuse arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 1782US11335424B2One-time programmable memory bit cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 17, 2022·1 cites·20 claims
- 1882US10929588B2Integrated circuit layout, structure, system, and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·2 cites·20 claims
- 1981US11380693B2Semiconductor device including anti-fuse cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 5, 2022·3 cites·20 claims
- 2081US2024349494A1Layout structure including anti-fuse cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2181US2025294731A1Novel metal fuse structure by via landingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2280US12243618B2Method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 2380US12230359B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 2479US12080641B2Electrical fuse bit cell in integrated circuit having backside conducting linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 2579US12052859B2Non-volatile memory device with reduced areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 2679US2024363530A1Electrical fuse bit cell in integrated circuit having backside conducting linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2779US2025266347A1Modified fuse structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2879US2025365947A1Power performance area attractive multiple transistor anti-fuse bit cell layout structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2979US2024389312A1Metal fuse structure by via landingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3078US11942168B2EFuse structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·0 cites·20 claims
- 3177US12165865B2Efuse with fuse walls and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 3277US12027221B2Integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 3377US2025335688A1Memory device with improved anti-fuse read currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3477US2025329400A1Semiconductor memory devices with backside heater structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3576US10878930B1Layout structure of memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·1 cites·20 claims
- 3676US10535602B2Reduced area eFuse cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·2 cites·20 claims
- 3776US2025329401A1Memory device, layout, and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3876US2025087582A1EfuseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3976US2025149073A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4075US12406741B2Semiconductor memory devices with backside heater structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
- 4175US2025356891A1Memory device and manufacturing method and test method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4274US2024071536A1One-time programmable memory bit cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4373US12193223B2Memory device with improved anti-fuse read currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·21 claims
- 4473US12063773B2Layout structure including anti-fuse cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 4573US12048147B2Layout structure including anti-fuse cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 23, 2024·0 cites·20 claims
- 4673US11783107B2Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 4773US11621046B2EFuse circuit, method, layout, and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·0 cites·20 claims
- 4872US11842781B2Layout structures of memory array and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·0 cites·20 claims
- 4972US11817160B2One-time programmable memory bit cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·0 cites·20 claims
- 5072US2023157010A1Integrated circuit including efuse cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 78 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →