Inventor · disambiguated record
Yasumichi Yasuda
Also filed as: MOCHIZUKI YASUHIRO · YASUDA YASUMICHI
15 granted patents·344 citations·filing 1975–1998
94Inventor score
Top patents by PatentIndex Score
15 records- 0182US5804868ASemiconductor device having planar junctionHITACHI LTD·Filed 1996·Granted Sep 8, 1998·56 cites·7 claims
- 0281US4193826AVapor phase diffusion of aluminum with or without boronHITACHI LTD·Filed 1978·Granted Mar 18, 1980·35 cites·12 claims
- 0375US5691553ASemiconductor device and power converter using sameHITACHI LTD·Filed 1995·Granted Nov 25, 1997·33 cites·11 claims
- 0473US5208471ASemiconductor device and manufacturing method thereforHITACHI LTD·Filed 1991·Granted May 4, 1993·54 cites·16 claims
- 0569US3984859AHigh withstand voltage semiconductor device with shallow grooves between semiconductor region and field limiting rings with outer mesa grooveHITACHI LTD·Filed 1975·Granted Oct 5, 1976·16 cites·8 claims
- 0662US5274541AParallel circuit module including a diode and an IGBTHITACHI LTD·Filed 1990·Granted Dec 28, 1993·32 cites·1 claims
- 0759US5898199ASemiconductor device and power converter using sameHITACHI LTD·Filed 1997·Granted Apr 27, 1999·16 cites·8 claims
- 0855US6198126B1Semiconductor device and power converter using sameHITACHI LTD·Filed 1998·Granted Mar 6, 2001·13 cites·8 claims
- 0955US5539244APower semiconductor deviceHITACHI LTD·Filed 1994·Granted Jul 23, 1996·23 cites·16 claims
- 1049US4935799AComposite semiconductor deviceMORI MUTSUHIRO·Filed 1988·Granted Jun 19, 1990·13 cites·5 claims
- 1147US5179034AMethod for fabricating insulated gate semiconductor deviceHITACHI LTD·Filed 1991·Granted Jan 12, 1993·18 cites·9 claims
- 1246US5285094AVertical insulated gate semiconductor device with less influence from the parasitic bipolar effectHITACHI LTD·Filed 1992·Granted Feb 8, 1994·14 cites·7 claims
- 1343US5032532AMethod for fabricating insulated gate semiconductor deviceHITACHI LTD·Filed 1988·Granted Jul 16, 1991·12 cites·24 claims
- 1437US5262339AMethod of manufacturing a power semiconductor device using implants and solid diffusion sourceHITACHI LTD·Filed 1993·Granted Nov 16, 1993·6 cites·1 claims
- 1533US5670811AVertical insulated gate semiconductor device having high current density and high reliabilityHITACHI LTD·Filed 1995·Granted Sep 23, 1997·3 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →