Inventor · disambiguated record
Yen-Hsiu Chen
Also filed as: CHEN YEN-HSIU
13 granted patents·7 pending applications·4 citations·filing 2004–2025
84Inventor score
Top patents by PatentIndex Score
20 records- 0182US11562923B2Semiconductor arrangement including a first electrical insulator layer and a second electrical insulator layer and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·1 cites·20 claims
- 0281US12363928B2Surface damage control in diodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 0381US12046615B2Semiconductor device including deep trench isolation structure comprising dielectric structure and copper structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·1 cites·20 claims
- 0480US2025311257A1Surface damage control in diodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0579US10516040B2Method of forming epitaxial silicon layer and semiconductor device thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·2 cites·20 claims
- 0678US2024347377A1Fabrication method of metal-free soi waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0777US2024371680A1Semiconductor arrangement and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0876US2024391761A1Semiconductor structure and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0974US12094756B2Semiconductor arrangement comprising isolation structure comprising at least two electrical insulator layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 17, 2024·0 cites·20 claims
- 1074US12040221B2Fabrication method of metal-free SOI waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 1169US12297104B2Semiconductor structure and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 13, 2025·0 cites·20 claims
- 1269US11973148B2Surface damage control in diodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 30, 2024·0 cites·20 claims
- 1367US12369336B2Method and system for forming metal-insulator-metal capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 1463US2024387586A1Contact etch stop layer for a pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1562US11232974B2Fabrication method of metal-free SOI waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 25, 2022·0 cites·20 claims
- 1661US2024347571A1Semiconductor device and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1759US10868156B2Method of forming epitaxial silicon layer and semiconductor device thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 1856US11502160B2Method and system for forming metal-insulator-metal capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
- 1948US2023063905A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 2039US7176081B2Low temperature method for metal depositionTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 13, 2007·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →