Inventor · disambiguated record
Yen-Ting Chiang
Also filed as: CHIANG YEN-KO · CHIANG YEN-TING
48 granted patents·18 pending applications·124 citations·filing 2007–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD58MEDIATEK INC2NAT CHUNG SHAN INST SCIENCE & TECH2ASUSTEK COMP INC1MAKE LIFE INT ENTERPRISE CO LTD1
Top patents by PatentIndex Score
66 records- 0197US11791357B2Composite BSI structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·5 cites·20 claims
- 0296US9704904B2Deep trench isolation structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 11, 2017·22 cites·20 claims
- 0395US11227889B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
- 0495US10658410B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·9 cites·20 claims
- 0595US10304886B2Back-side deep trench isolation (BDTI) structure for pinned photodiode image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·12 cites·20 claims
- 0695US10276618B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·8 cites·20 claims
- 0794US11211419B2Composite bsi structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·4 cites·20 claims
- 0894US10461109B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 29, 2019·9 cites·20 claims
- 0993US11545513B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·2 cites·20 claims
- 1093US11430823B2Method for manufacturing semiconductor image sensor device having deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·2 cites·20 claims
- 1193US11404460B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 1293US9954022B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·7 cites·20 claims
- 1392US10825853B2Semiconductor image sensor device with deep trench isolations and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 3, 2020·3 cites·20 claims
- 1492US9728570B2Deep trench isolation fabrication for BSI image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·7 cites·20 claims
- 1591US12310137B2Isolation structure to increase image sensor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·1 cites·20 claims
- 1690US11088196B2Metal reflector grounding for noise reduction in light detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·2 cites·20 claims
- 1789US12490537B2Image sensor having an improved structure for small pixel designsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 2, 2025·1 cites·20 claims
- 1889US11984465B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·1 cites·20 claims
- 1989US9754993B2Deep trench isolations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 5, 2017·5 cites·20 claims
- 2089US2025351596A1Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2188US10727265B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·3 cites·20 claims
- 2286US12211876B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 2385US12464839B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 2485US10510789B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·2 cites·20 claims
- 2585US9812483B2Back-side illuminated (BSI) image sensor with global shutter schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·4 cites·20 claims
- 2684US12148782B2Composite BSI structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 2784US10777590B2Method for forming image sensor device structure with doping layer in light-sensing regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 15, 2020·1 cites·20 claims
- 2883US2024363671A1Deep trench isolations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2982US2024371904A1Composite bsi structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3081US10971534B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 6, 2021·1 cites·20 claims
- 3181US2025344539A1Image sensor having an improved structure for small pixel designsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3279US11728366B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 3379US10861894B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
- 3478US12154927B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 3578US9536810B1Flat pad structure for integrating complementary metal-oxide-semiconductor (CMOS) image sensor processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·3 cites·20 claims
- 3678US2025348648A1Bonded Semiconductor Device And Method For Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3776US11948949B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 3876US2025323194A1Bond structure for stacked ic chipsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3976US2025255027A1Isolation structure to increase image sensor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4075US12087801B2Deep trench isolations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 4175US2024387591A1Bond pad structure with high via densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4274US12501722B2Image sensor with dummy polysilicon based extension padTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 4374US2025246565A1Bond structure for stacked ic chipsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4472US11705474B2Metal reflector grounding for noise reduction in light detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 4570US11069733B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 20, 2021·0 cites·20 claims
- 4669US10097136B1Transformer feed-back quadrature voltage controlled oscillator for correcting dynamic phase error and communication apparatus using the sameNAT CHUNG SHAN INST SCIENCE & TECH·Filed 2017·Granted Oct 9, 2018·2 cites·19 claims
- 4768US7899727B2System and method for securities information serviceTELEPAQ TECHNOLOGY INC·Filed 2007·Granted Mar 1, 2011·1 cites·8 claims
- 4867US11495630B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
- 4964US12224298B2Bond pad structure with high via densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 11, 2025·0 cites·20 claims
- 5064US11374046B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
Showing the top 50 of 66 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →