Inventor · disambiguated record
Yeonchoo Cho
Also filed as: CHO YEONCHOO
45 granted patents·10 pending applications·42 citations·filing 2015–2025
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD55
Top patents by PatentIndex Score
55 records- 0197US11682622B2Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 20, 2023·5 cites·14 claims
- 0297US11588034B2Field effect transistor including gate insulating layer formed of two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 21, 2023·4 cites·26 claims
- 0395US10684560B2Pellicle for photomask, reticle including the same, and exposure apparatus for lithographySAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 16, 2020·6 cites·28 claims
- 0490US11088077B2Layer structure including diffusion barrier layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 10, 2021·2 cites·9 claims
- 0588US11563116B2Vertical type transistor, inverter including the same, and vertical type semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 24, 2023·1 cites·40 claims
- 0688US11532709B2Field effect transistor including channel formed of 2D materialSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 20, 2022·1 cites·17 claims
- 0788US11217531B2Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 4, 2022·2 cites·19 claims
- 0887US12408399B2Semiconductor device including two-dimensional semiconductor materialSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
- 0986US10134628B2Multilayer structure including diffusion barrier layer and device including the multilayer structureSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 20, 2018·4 cites·28 claims
- 1085US11626502B2Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 11, 2023·1 cites·24 claims
- 1184US10850985B2Method of forming nanocrystalline graphene, and device including nanocrystalline grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 1, 2020·3 cites·18 claims
- 1281US11069619B2Interconnect structure and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 20, 2021·3 cites·11 claims
- 1380US12359911B2Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPSSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·12 claims
- 1480US12255244B2Field effect transistor including gate insulating layer formed of two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 1579US12062697B2Semiconductor device including two-dimensional semiconductor materialSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·14 claims
- 1678US10971451B2Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 6, 2021·2 cites·22 claims
- 1777US10217513B2Phase change memory devices including two-dimensional material and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 26, 2019·4 cites·41 claims
- 1876US11086223B2Hardmask composition and method of forming pattern using the hardmask compositionSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 10, 2021·1 cites·5 claims
- 1976US2025089320A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2075US11764156B2Layer structure including diffusion barrier layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 19, 2023·0 cites·6 claims
- 2175US2025185339A1Field effect transistor including gate insulating layer formed of two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2272US12027588B2Field effect transistor including channel formed of 2D materialSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·18 claims
- 2372US12002882B2Vertical type transistor, inverter including the same, and vertical type semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 4, 2024·0 cites·20 claims
- 2472US10495972B2Hardmask composition and method of forming pattern using the hardmask compositionSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 3, 2019·1 cites·18 claims
- 2571US11881399B2Method of forming transition metal dichalcogenide thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 23, 2024·0 cites·19 claims
- 2670US11508815B2Semiconductor device including two-dimensional semiconductor materialSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·15 claims
- 2770US10229881B2Layer structure including diffusion barrier layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 12, 2019·1 cites·17 claims
- 2869US12506074B2Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 2969US11985910B2Memristor and neuromorphic device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 14, 2024·0 cites·21 claims
- 3069US10199469B2Semiconductor device including metal-semiconductor junctionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 5, 2019·1 cites·20 claims
- 3167US12183780B2Metal-to-semiconductor contact including a 2D crystal material layerSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·17 claims
- 3262US11906291B2Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPSSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·8 claims
- 3362US10790230B2Layer structure including diffusion barrier layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 29, 2020·0 cites·14 claims
- 3462US10727182B2Layer structure including diffusion barrier layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 28, 2020·0 cites·14 claims
- 3562US2025142907A1Semiconductor device including vertical channel having tube shapeSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3661US12046656B2Semiconductor device including surface-treated semiconductor layerSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·19 claims
- 3761US2025176226A1Semiconductor device including two-dimensional material and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3860US11374171B2Memristor and neuromorphic device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·22 claims
- 3959US12421598B2Nanocrystalline graphene and method of forming nanocrystalline grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·25 claims
- 4059US11149346B2Method of directly growing carbon material on substrateSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 19, 2021·0 cites·23 claims
- 4159US2024113211A1Semiconductor device including two dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4259US2024113028A1Interconnection layer structures including two-dimensional (2d) material, electronic devices including interconnection layer structures, and electronic apparatuses including electronic devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4358US11572278B2Method of forming grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 7, 2023·0 cites·19 claims
- 4458US11476117B2Method of forming transition metal dichalcogenide thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·20 claims
- 4558US2025142874A1Semiconductor device having vertical channel structure and manufacturing method of vertical channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4657US2023072863A1Semiconductor element, electronic system including the semiconductor element, and method of fabricating the semiconductor elementSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 4755US12027589B2Semiconductor device including graphene and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 2, 2024·0 cites·12 claims
- 4855US2025107096A1Memory device including two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4954US12103850B2Method of forming grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 1, 2024·0 cites·24 claims
- 5054US11961898B2Method of patterning two-dimensional material layer on substrate, and method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 16, 2024·0 cites·20 claims
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →