Inventor · disambiguated record
Yean-Kuen Fang
Also filed as: FANG YEAN-KUEN
31 granted patents·1 pending application·419 citations·filing 1992–2015
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG12NAT SCIENCE COUNCIL10IND TECH RES INST3NAT SCIENCE COUNCIL REPUBLIC CHINA2UNIV NAT CHENG KUNG2
Top patents by PatentIndex Score
32 records- 0194US7387907B2Image sensor with optical guard ring and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 17, 2008·26 cites·11 claims
- 0284US6077760AStructure and method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance characteristicsNAT SCIENCE COUNCIL·Filed 1997·Granted Jun 20, 2000·94 cites·24 claims
- 0382US6877385B2Contact type micro piezoresistive shear-stress sensorNAT SCIENCE COUNCIL·Filed 2001·Granted Apr 12, 2005·32 cites·5 claims
- 0480US7014710B2Method of growing single crystal Gallium Nitride on silicon substrateUNIV NAT CHENG KUNG·Filed 2003·Granted Mar 21, 2006·21 cites·21 claims
- 0576US7122840B2Image sensor with optical guard ring and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 17, 2006·19 cites·16 claims
- 0671US8987113B2Image sensor including multiple lenses and method of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 24, 2015·0 cites·20 claims
- 0770US6274413B1Method for fabricating a polysilicon thin film transistorNAT SCIENCE COUNCIL·Filed 2000·Granted Aug 14, 2001·22 cites·20 claims
- 0867US6161421AIntegrated ethanol gas sensor and fabrication method thereofNAT SCIENCE COUNCIL·Filed 1997·Granted Dec 19, 2000·36 cites·8 claims
- 0957US6271570B1Trench-free buried contactTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 7, 2001·6 cites·3 claims
- 1057US6046066AMethod of forming cantilever structure in microelectromanical systemNAT SCIENCE COUNCIL OF REP OF·Filed 1998·Granted Apr 4, 2000·32 cites·5 claims
- 1157US5502595AColor filters and their preparationIND TECH RES INST·Filed 1994·Granted Mar 26, 1996·19 cites·21 claims
- 1256US5449923AAmorphous silicon color detectorIND TECH RES INST·Filed 1992·Granted Sep 12, 1995·17 cites·5 claims
- 1352US9768224B2Image sensor including multiple lenses and method of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 19, 2017·0 cites·18 claims
- 1450US7048603B2Method for manufacturing organic light-emitting diodesUNIV NAT CHENG KUNG·Filed 2003·Granted May 23, 2006·2 cites·40 claims
- 1549US6110822AMethod for forming a polysilicon-interconnect contact in a TFT-SRAMTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 29, 2000·15 cites·23 claims
- 1648US7079412B2Programmable MOS device formed by stressing polycrystalline siliconTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 18, 2006·5 cites·25 claims
- 1746US5714772AMethod of manufacturing light converter with amorphous-silicon pin heterojunction diodeNAT SCIENCE COUNCIL·Filed 1996·Granted Feb 3, 1998·12 cites·3 claims
- 1844US6291306B1Method of improving the voltage coefficient of resistance of high polysilicon resistorsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 18, 2001·9 cites·15 claims
- 1944US2006057765A1Image sensor including multiple lenses and method of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2004·Application pending·0 cites
- 2041US5953606AMethod for manufacturing a TFT SRAM memory device with improved performanceTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 14, 1999·7 cites·13 claims
- 2140US5789263AAmorphous silicon color detector and manufacture of sameIND TECH RES INST·Filed 1995·Granted Aug 4, 1998·8 cites·3 claims
- 2239US6078087ASRAM memory device with improved performanceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 20, 2000·6 cites·11 claims
- 2338US6271544B1SiC/Si heterostructure semiconductor switch and fabrication thereofNAT SCIENCE COUNCIL·Filed 1998·Granted Aug 7, 2001·8 cites·5 claims
- 2435US6046062AMethod to monitor the kink effectTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 4, 2000·5 cites·14 claims
- 2534US6054747AIntegrated photoreceiver having metal-insulator-semiconductor switchNAT SCIENCE COUNCIL·Filed 1998·Granted Apr 25, 2000·5 cites·13 claims
- 2633US5838034AInfrared optical bulk channel field effect transistor for greater effectivenessNAT SCIENCE COUNCIL·Filed 1996·Granted Nov 17, 1998·4 cites·8 claims
- 2732US6080647AProcess to form a trench-free buried contactTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 27, 2000·2 cites·17 claims
- 2830US5604136AMethod of manufacturing light converter with amorphous-silicon pin heterojunction diodeNAT SCIENCE COUNCIL·Filed 1995·Granted Feb 18, 1997·3 cites·19 claims
- 2929US6225672B1High-gain and high-temperature applicable phototransistor with multiple mono-crystalline silicon-carbide layers on a silicon substrateNAT SCIENCE COUNCIL REPUBLIC CHINA·Filed 1998·Granted May 1, 2001·3 cites·9 claims
- 3029US6128211AStructures of a low-voltage-operative non-volatile ferroelectric memory device with floating gateNAT SCIENCE COUNCIL·Filed 1997·Granted Oct 3, 2000·1 cites·17 claims
- 3127US6221699B1Method of fabricating an infrared optical bulk channel field effect transistorFiled 1998·Granted Apr 24, 2001·0 cites·4 claims
- 3227US6033985AContact process interconnect poly-crystal silicon layer in thin film SRAMNAT SCIENCE COUNCIL REPUBLIC CHINA·Filed 1998·Granted Mar 7, 2000·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →