Inventor · disambiguated record
Yen-Chieh Huang
Also filed as: HUANG YEN-CHIEH
55 granted patents·36 pending applications·188 citations·filing 1996–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD56HUANG YEN-CHIEH3UNIV NAT TSING HUA3UNIV TSINGHUA3VIVOTEK INC3
Top patents by PatentIndex Score
91 records- 0198US11616142B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·4 cites·20 claims
- 0298US11527649B1Ferroelectric field effect transistor devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·9 cites·20 claims
- 0395US12089415B2Metal layers for increasing polarization of ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·2 cites·20 claims
- 0495US11195951B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·8 cites·20 claims
- 0593US8044422B2Semiconductor light emitting devices with a substrate having a plurality of bumpsHUGA OPTOTECH INC·Filed 2010·Granted Oct 25, 2011·11 cites·28 claims
- 0689US12167609B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·1 cites·20 claims
- 0787US11903217B2Ferroelectric memory device with a metal layer having a crystal orientation for improving ferroelectric polarization and method for forming the ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·1 cites·20 claims
- 0887US9335365B2Split gate structure and method of using sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 10, 2016·6 cites·20 claims
- 0986US7401941B2FlashlightMOBILETRON ELECTRONICS CO LTD·Filed 2005·Granted Jul 22, 2008·33 cites·7 claims
- 1085US11901415B2Transistor isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·1 cites·20 claims
- 1183US12136673B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
- 1283US7619231B2Laser-beat-wave photocathode electron accelerator and electron radiation apparatus using the sameUNIV TSINGHUA·Filed 2007·Granted Nov 17, 2009·7 cites·18 claims
- 1383US2024395604A1Semiconductor structure having epitaxial structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1483US2025311231A1Memory device and method for forming a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1582US12131943B2Semiconductor structure having epitaxial structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
- 1682US11450733B2Three dimensional metal insulator metal capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 20, 2022·2 cites·20 claims
- 1781US12402379B2Epitaxial layer under a gate structure of a transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
- 1881US12363912B2Ferroelectric memory device with a metal layer having a crystal orientation for improving ferroelectric polarization and method for forming the ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 1981US12144259B2Organic gate TFT-type stress sensors and method of making and using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 2080US11824121B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 21, 2023·0 cites·20 claims
- 2180US9742145B1Off-axis zigzag parametric oscillatorNAT UNIV TSING HUA·Filed 2016·Granted Aug 22, 2017·3 cites·13 claims
- 2280US2025318224A1Epitaxial layer under a transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2379US12119402B2Semiconductor devices with ferroelectric layer and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·0 cites·20 claims
- 2479US2024363681A1Three dimensional metal insulator metal capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2579US2024389463A1Organic gate tft-type stress sensors and method of making and using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2678US2024347632A1Semiconductor devices with ferroelectric layer and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2777US12087811B2Three dimensional metal insulator metal capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 2877US6004489AMethod for designing an extrusion process and dieFiled 1997·Granted Dec 21, 1999·16 cites·19 claims
- 2977US2025331196A1Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3075US11670715B2Semiconductor devices with ferroelectric layer and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·15 claims
- 3174US8476658B2Semiconductor light-emitting devicesDAI JING JIE·Filed 2010·Granted Jul 2, 2013·2 cites·19 claims
- 3274US2024389343A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3374US2024373642A1Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (mfmis-fet) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3474US2024365558A1Metal layers for increasing polarization of ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3573US11817498B2Ferroelectric field effect transistor devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·0 cites·20 claims
- 3673US11756824B2Semiconductor structure having epitaxial structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·20 claims
- 3773US9203136B2Antenna system generating quasi relativistic radiationNAT UNIV TSING HUA·Filed 2014·Granted Dec 1, 2015·2 cites·16 claims
- 3873US7433373B2Actively Q-switched laser system using quasi-phase-matched electro-optic Q-switchUNIV TSINGHUA·Filed 2004·Granted Oct 7, 2008·11 cites·10 claims
- 3971US5974850AExtrusion dieFiled 1998·Granted Nov 2, 1999·12 cites·17 claims
- 4070US12027601B2Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 4170US11908936B2Double gate ferroelectric field effect transistor devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 4270US2025023315A1Cone laser-gain module, double-side-pumped cone laser-gain module, cone laser amplifier, and cone laser oscillatorUNIV NAT TSING HUA·Filed 2024·Application pending·0 cites
- 4369US12382640B2Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·20 claims
- 4469US12150309B2Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 4569US12015236B2Dielectric-grating-waveguide free-electron laserUNIV NAT TSING HUA·Filed 2021·Granted Jun 18, 2024·0 cites·17 claims
- 4669US5756016AMethod for modeling a high speed extrusion dieFiled 1996·Granted May 26, 1998·11 cites·13 claims
- 4768US11810956B2In-situ thermal annealing of electrode to form seed layer for improving FeRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
- 4868US6771409B2Simultaneous wavelength conversion and amplitude modulation in a monolithic quasi-phase-matched (QPM) nonlinear optical crystalFiled 2001·Granted Aug 3, 2004·11 cites·10 claims
- 4968US2025246867A1Laser pumping device with pump light guided by cooling liquidLEDIAS CORP·Filed 2024·Application pending·0 cites
- 5068US2023369420A1In-situ thermal annealing of electrode to form seed layer for improving feram performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 91 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →