Inventor · disambiguated record
Yen-Tai Lin
Also filed as: LIN YEN-TAI
21 granted patents·7 pending applications·359 citations·filing 1996–2011
96Inventor score
Files withEMEMORY TECHNOLOGY INC14VANGUARD INT SEMICONDUCT CORP7LIN CHING-YUAN2LIN YEN-TAI1LIU SHYAN-JUH1
Top patents by PatentIndex Score
28 records- 0190US6617637B1Electrically erasable programmable logic deviceEMEMORY TECHNOLOGY INC·Filed 2002·Granted Sep 9, 2003·57 cites·33 claims
- 0287US8373485B2Voltage level shifting apparatusEMEMORY TECHNOLOGY INC·Filed 2011·Granted Feb 12, 2013·14 cites·16 claims
- 0386US7427889B2Voltage regulator outputting positive and negative voltages with the same offsetsEMEMORY TECHNOLOGY INC·Filed 2006·Granted Sep 23, 2008·16 cites·6 claims
- 0476US6829166B2Method for controlling a non-volatile dynamic random access memoryEMEMORY TECHNOLOGY INC·Filed 2002·Granted Dec 7, 2004·24 cites·21 claims
- 0576US6153463ATriple plate capacitor and method for manufacturingMACRONIX INT CO LTD·Filed 1999·Granted Nov 28, 2000·49 cites·22 claims
- 0676US5920221ARC delay circuit for integrated circuitsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Jul 6, 1999·34 cites·17 claims
- 0769US6091264ASchmitt trigger input stageVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jul 18, 2000·23 cites·6 claims
- 0866US6580658B1Method using a word line driver for driving a word lineEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jun 17, 2003·15 cites·14 claims
- 0965US5998846ALayout structure of multi-use coupling capacitors in reducing ground bounces and replacing faulty logic componentsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Dec 7, 1999·27 cites·7 claims
- 1064US6819620B2Power supply device with reduced power consumptionEMEMORY TECHNOLOGY INC·Filed 2003·Granted Nov 16, 2004·13 cites·7 claims
- 1163US7405972B1Non-volatile memory arrayEMEMORY TECHNOLOGY INC·Filed 2007·Granted Jul 29, 2008·5 cites·23 claims
- 1263US5786709AIntegrated circuit output driver incorporating power distribution noise suppression circuitryVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Jul 28, 1998·21 cites·12 claims
- 1355US7558119B2Operating method of P-channel non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2008·Granted Jul 7, 2009·0 cites·7 claims
- 1455US6580645B1Page buffer of a flash memoryEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jun 17, 2003·9 cites·16 claims
- 1555US5896344ALocal word line decoder for memory with 2 1/2 MOS devicesVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Apr 20, 1999·15 cites·15 claims
- 1653US2008159008A1Operating method of p-channel non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2008·Application pending·0 cites
- 1752US5867445ALocal word line decoder for memory with 2 MOS devicesVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Feb 2, 1999·13 cites·8 claims
- 1849US5867433ASemiconductor memory with a novel column decoder for selecting a redundant arrayVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Feb 2, 1999·13 cites·22 claims
- 1948US7254086B2Method for accessing memoryEMEMORY TECHNOLOGY INC·Filed 2005·Granted Aug 7, 2007·2 cites·13 claims
- 2048US2007181937A1P-channel non-volatile memory and operating method thereofLIN YEN-TAI·Filed 2006·Application pending·0 cites
- 2147US7453312B2Voltage regulator outputting positive and negative voltages with the same offsetsEMEMORY TECHNOLOGY INC·Filed 2008·Granted Nov 18, 2008·1 cites·11 claims
- 2244US6580307B1Level shift circuit without junction breakdown of transistorsEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jun 17, 2003·5 cites·4 claims
- 2341US6775189B2Option fuse circuit using standard CMOS manufacturing processEMEMORY TECHNOLOGY INC·Filed 2002·Granted Aug 10, 2004·3 cites·17 claims
- 2438US2012032566A1Housing and fabrication method thereofLIU SHYAN-JUH·Filed 2010·Application pending·0 cites
- 2537US2008056013A1Method and Related Apparatus Capable of Improving Endurance of MemoryLIN CHING-YUAN·Filed 2007·Application pending·0 cites
- 2636US2007159883A1Method and Related Apparatus Capable of Improving Endurance of MemoryLIN CHING-YUAN·Filed 2006·Application pending·0 cites
- 2732US2004129954A1Embedded nonvolatile memory having metal contact padsFiled 2003·Application pending·0 cites
- 2829US2013064027A1Memory and Method of Adjusting Operating Voltage thereofWU MENG-YI·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →