Inventor · disambiguated record
Yen-Ming Peng
Also filed as: PENG YEN-MING
16 granted patents·22 citations·filing 2013–2023
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD16
Top patents by PatentIndex Score
16 records- 0190US9412866B2BEOL selectivity stress filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·13 cites·20 claims
- 0285US10164071B2FinFET device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·3 cites·20 claims
- 0381US9070687B2Semiconductor device with self-protecting fuseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 30, 2015·4 cites·20 claims
- 0479US10164059B2FinFET device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·2 cites·20 claims
- 0570US11804547B2Gate structure and method with enhanced gate contact and threshold voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 0663US11107922B2Gate structure and method with enhanced gate contact and threshold voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·20 claims
- 0761US12119403B2Gate structure and method with enhanced gate contact and threshold voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·0 cites·20 claims
- 0861US10326006B2FinFET device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 18, 2019·0 cites·20 claims
- 0957US10840376B2Gate structure and method with enhanced gate contact and threshold voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·0 cites·20 claims
- 1057US10204843B2Interconnect arrangement with stress-reducing structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 12, 2019·0 cites·20 claims
- 1155US10014251B2Semiconductor device with self-protecting fuse and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 3, 2018·0 cites·20 claims
- 1255US9818666B2Interconnect arrangement with stress-reducing structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·0 cites·20 claims
- 1355US9252047B2Interconnect arrangement with stress-reducing structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 2, 2016·0 cites·20 claims
- 1453US9472508B2Interconnect arrangement with stress-reducing structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 18, 2016·0 cites·20 claims
- 1552US9299658B2Semiconductor device with self-protecting fuse and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 29, 2016·0 cites·20 claims
- 1647US9093528B2Stress compensation layer to improve device uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 28, 2015·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →