Inventor · disambiguated record
Yi-Hsiang Chao
Also filed as: CHAO YI-HSIANG
15 granted patents·9 pending applications·19 citations·filing 2011–2025
88Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD20HSU HSIN-AN1IND TECH RES INST1UNIV NAT CHIAO TUNG1WISTRON CORP1
Top patents by PatentIndex Score
24 records- 0192US11901183B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 0292US11107690B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·9 cites·20 claims
- 0389US10685842B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·4 cites·20 claims
- 0488US11011611B2Semiconductor device with low resistivity contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·2 cites·20 claims
- 0586US12512324B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 30, 2025·0 cites·20 claims
- 0686US12417945B2Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·1 cites·20 claims
- 0783US2025349616A1Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0882US11295956B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·1 cites·20 claims
- 0977US11972951B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 1077US2025357191A1Conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1177US2025364242A1Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1276US12394625B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 1376US2024387265A1Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1475US2025323044A1Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1574US2025316536A1Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1673US12272600B2Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 1764US12456617B2Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 28, 2025·0 cites·20 claims
- 1856US2025040213A1Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1954US10700177B2Semiconductor device with low resistivity contact structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·0 cites·20 claims
- 2051US12190234B2Anomaly detection device and anomaly detection method based on generative adversarial network architectureIND TECH RES INST·Filed 2020·Granted Jan 7, 2025·0 cites·15 claims
- 2150US9217063B2Conjugated polymer compoundUNIV NAT CHIAO TUNG·Filed 2014·Granted Dec 22, 2015·0 cites·15 claims
- 2246US11222818B2Formation method of semiconductor device structure with metal-semiconductor compound regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 11, 2022·0 cites·18 claims
- 2341US2014268622A1Fixing mechanism for fixing an portable electronic device and related electronic apparatusWISTRON CORP·Filed 2013·Application pending·0 cites
- 2439US2012069518A1Portable electronic deviceHSU HSIN-AN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →