Inventor · disambiguated record
Yi-Huan Chen
Also filed as: Chen yi-huan
53 granted patents·18 pending applications·75 citations·filing 2016–2025
97Inventor score
Top patents by PatentIndex Score
71 records- 0198US10050033B1High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·18 cites·20 claims
- 0297US11677022B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·4 cites·20 claims
- 0396US12021140B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 0495US11823959B2FUSI gated device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·2 cites·20 claims
- 0595US10340357B2Dishing prevention dummy structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 2, 2019·9 cites·20 claims
- 0694US12191365B2Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·1 cites·20 claims
- 0791US9831340B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·6 cites·16 claims
- 0890US12211926B2Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·1 cites·20 claims
- 0990US10516029B2Dishing prevention dummy structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·4 cites·20 claims
- 1088US2025120153A1Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1187US12356658B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 1287US2025311292A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1386US10748899B2Epitaxial source and drain structures for high voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 18, 2020·4 cites·20 claims
- 1484US12261218B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 1584US11302691B2High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·1 cites·20 claims
- 1683US12363998B2Recessed gate for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1783US10535752B2Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·2 cites·20 claims
- 1883US10177043B1Method for manufacturing multi-voltage devices using high-K-metal-gate (HKMG) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 8, 2019·3 cites·20 claims
- 1983US2024379788A1Thicker corner of a gate dielectric structure around a recessed gate electrode for an mv deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2083US2025311405A1Recessed gate for an mv deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2182US12255207B2Boundary design for high-voltage integration on HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 2282US11133226B2FUSI gated device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 28, 2021·2 cites·20 claims
- 2381US11527531B2Recessed gate for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 13, 2022·2 cites·20 claims
- 2480US12439679B2FUSI gated device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 2579US10790279B2High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·1 cites·20 claims
- 2678US10553583B2Boundary region for high-k-metal-gate(HKMG) integration technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 4, 2020·2 cites·18 claims
- 2777US12211935B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 2877US11799007B2Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 2977US11276684B2Recessed composite capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·2 cites·20 claims
- 3077US10950708B2Dishing prevention dummy structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·1 cites·20 claims
- 3177US10804220B2Dishing prevention columns for bipolar junction transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·1 cites·20 claims
- 3277US10510750B2High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 3377US2025221032A1Boundary design for high-voltage integration on hkmg technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3476US9853149B1Floating grid and crown-shaping poly for improving ILD CMP dishingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 26, 2017·2 cites·20 claims
- 3576US2025203927A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3675US11855091B2Boundary design for high-voltage integration on HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3775US2025318258A1Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3874US11948938B2Recessed gate for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 3974US11810973B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 4074US11569363B2Dishing prevention dummy structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 4174US10937785B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 2, 2021·2 cites·8 claims
- 4274US2024379789A1Transistor device with recessed gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4373US11004844B2Recessed STI as the gate dielectric of HV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 11, 2021·1 cites·20 claims
- 4473US2024379664A1Checkerboard dummy design for epitaxial open ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4572US11469307B2Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·20 claims
- 4671US11508845B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 4770US12176407B2Method of forming a transistor device with a gate structure having a pair of recess regions and a resistive protection layer withinTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 4869US12414361B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 4968US11410999B2Boundary design for high-voltage integration on HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 5067US12349454B2Checkerboard dummy design for epitaxial open ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →