Inventor · disambiguated record
Yi-Lung Cheng
Also filed as: CHENG YI · CHENG YI-LUNG
32 granted patents·13 pending applications·297 citations·filing 2000–2025
97Inventor score
Top patents by PatentIndex Score
45 records- 0190US12089369B2Separate immersion cooling device and separate immersion cooling system having the sameWIWYNN CORP·Filed 2022·Granted Sep 10, 2024·2 cites·19 claims
- 0283US2025358966A1Immersion cooling system and electronic apparatus having the same and pressure adjusting moduleWIWYNN CORP·Filed 2025·Application pending·0 cites
- 0382US12408299B2Immersion cooling system and electronic apparatus having the same and pressure adjusting moduleWIWYNN CORP·Filed 2021·Granted Sep 2, 2025·1 cites·6 claims
- 0482US6713407B1Method of forming a metal nitride layer over exposed copperTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 30, 2004·37 cites·20 claims
- 0581US11740669B2Electronic apparatus having immersion cooling system and operating method thereofWIWYNN CORP·Filed 2021·Granted Aug 29, 2023·1 cites·17 claims
- 0681US6790778B1Method for capping over a copper layerTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 14, 2004·36 cites·28 claims
- 0780US6479098B1Method to solve particle performance of FSG layer by using UFU season film for FSG processTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 12, 2002·20 cites·21 claims
- 0877US7646207B2Method for measuring a property of interconnections and structure for the sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jan 12, 2010·7 cites·20 claims
- 0976US6815007B1Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season filmTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 9, 2004·14 cites·24 claims
- 1074US6759347B1Method of forming in-situ SRO HDP-CVD barrier filmTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 6, 2004·20 cites·21 claims
- 1173US7296532B2Bypass gas feed system and method to improve reactant gas flow and film depositionTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 20, 2007·18 cites·19 claims
- 1273US6660638B1CMP process leaving no residual oxide layer or slurry particlesTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 9, 2003·13 cites·3 claims
- 1372US7078336B2Method and system for fabricating a copper barrier layer with low dielectric constant and leakage currentTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 18, 2006·18 cites·15 claims
- 1472US6584987B1Method for improved cleaning in HDP-CVD process with reduced NF3 usageTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 1, 2003·31 cites·9 claims
- 1571US7176571B2Nitride barrier layer to prevent metal (Cu) leakage issue in a dual damascene structureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 13, 2007·19 cites·14 claims
- 1669US6802935B2Semiconductor chamber process apparatus and methodTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 12, 2004·13 cites·15 claims
- 1768US6703317B1Method to neutralize charge imbalance following a wafer cleaning processTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 9, 2004·14 cites·20 claims
- 1868US2025040039A1Package assemblyWIWYNN CORP·Filed 2024·Application pending·0 cites
- 1965US2025358954A1Heat dissipation assembly and motherboard moduleWIWYNN CORP·Filed 2025·Application pending·0 cites
- 2063US12426207B2Immersion fluid module and server systemWIWYNN CORP·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 2162US7512924B2Semiconductor device structure and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Mar 31, 2009·2 cites·16 claims
- 2261US12150243B2Package assemblyWIWYNN CORP·Filed 2022·Granted Nov 19, 2024·0 cites·12 claims
- 2358US7208415B2Plasma treatment method for electromigration reductionTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 24, 2007·8 cites·18 claims
- 2457US7449911B2Method for determining electro-migration failure modeTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 11, 2008·4 cites·16 claims
- 2557US6815072B2Method to solve particle performance of FSG layer by using UFU season film for FSG processTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 9, 2004·2 cites·10 claims
- 2657US2025287552A1Coolant flow rate control method and server cabinetWIWYNN CORP·Filed 2024·Application pending·0 cites
- 2755US7074701B2Method of forming a borderless contact opening featuring a composite tri-layer etch stop materialTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 11, 2006·8 cites·27 claims
- 2853US7125802B2CMP process leaving no residual oxide layer or slurry particlesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Oct 24, 2006·3 cites·4 claims
- 2951US6602560B2Method for removing residual fluorine in HDP-CVD chamberTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 5, 2003·2 cites·16 claims
- 3051US2025031341A1Cooling module, electronic system and control method thereofWIWYNN CORP·Filed 2024·Application pending·0 cites
- 3149US12363861B2Flow dividing device and immersion cooling system having the sameWIWYNN CORP·Filed 2022·Granted Jul 15, 2025·0 cites·7 claims
- 3248US6979656B2Carbon and halogen doped silicate glass dielectric layer and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 27, 2005·0 cites·18 claims
- 3347US2006125090A1Heat dissipation structure and method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 3446US7157367B2Device structure having enhanced surface adhesion and failure mode analysisTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jan 2, 2007·2 cites·28 claims
- 3544US7470584B2TEOS deposition methodTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 30, 2008·0 cites·18 claims
- 3643US7420277B2System for heat dissipation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 2, 2008·2 cites·10 claims
- 3742US6903019B2CMP process leaving no residual oxide layer or slurry particlesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 7, 2005·0 cites·4 claims
- 3842US2007267737A1Packaged devices and methods for forming packaged devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 3941US2005236716A1Heat dissipation structure and method thereofCHEN HSUCH-CHUNG·Filed 2004·Application pending·0 cites
- 4041US2007158835A1Method for designing interconnect for a new processing technologyTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 4139US7253121B2Method for forming IMD filmsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Aug 7, 2007·0 cites·5 claims
- 4239US2006076694A1Semiconductor device package with concavity-containing encapsulation body to prevent device delamination and increase thermal-transferring efficiencyTAIWAN SEMICONDUCTOR MFG·Filed 2004·Application pending·0 cites
- 4338US2006166458A1Method for forming shallow trench isolation structuresCHENG YI-LUNG·Filed 2005·Application pending·0 cites
- 4437US2005009367A1Novel method to increase fluorine stability to improve gap fill ability and reduce k value of fluorine silicate glass (FSG) filmTAIWAN SEMICONDUCTOR MFG·Filed 2003·Application pending·0 cites
- 4535US2005124151A1Novel method to deposit carbon doped SiO2 films with improved film qualityTAIWAN SEMICONDUCTOR MFG·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →