Inventor · disambiguated record
Yi-Wei Chiu
Also filed as: CHIU YI-WEI
133 granted patents·16 pending applications·681 citations·filing 2005–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD137AMERICAN MEGATRENDS INT LLC3TAIWAN SEMICONDUCTOR MFG3AMERICAN MEGATRENDS INC1ASUSTEK COMP INC1
Top patents by PatentIndex Score
149 records- 0198US11088025B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·12 cites·20 claims
- 0298US10141225B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·17 cites·20 claims
- 0398US10083863B1Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·77 cites·20 claims
- 0498US9812363B1FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 7, 2017·237 cites·20 claims
- 0597US11430694B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
- 0697US10510596B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·13 cites·20 claims
- 0796US10170555B1Intermetallic doping film with diffusion in source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·19 cites·20 claims
- 0895US12094877B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·2 cites·20 claims
- 0995US11776847B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
- 1095US10985061B2Methods for forming contact plugs with reduced corrosionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·8 cites·20 claims
- 1195US10483165B2Methods for forming contact plugs with reduced corrosionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·8 cites·20 claims
- 1295US10297555B2Integrated circuit structure having crown-shaped semiconductor strips and recesses in the substrate from etched dummy finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 21, 2019·10 cites·20 claims
- 1395US9881834B1Contact openings and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 30, 2018·14 cites·20 claims
- 1495US8837207B1Static memory and memory cell thereofUNIV NAT CHIAO TUNG·Filed 2013·Granted Sep 16, 2014·30 cites·16 claims
- 1594US12080547B2Interconnect system with improved low-K dielectricsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·2 cites·20 claims
- 1694US10854603B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·8 cites·20 claims
- 1794US10825727B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·5 cites·20 claims
- 1894US10522408B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·8 cites·20 claims
- 1994US10510516B2Moving focus ring for plasma etcherTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 17, 2019·9 cites·20 claims
- 2094US10186456B2Methods for forming contact plugs with reduced corrosionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 22, 2019·8 cites·20 claims
- 2194US9865697B1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·20 cites·20 claims
- 2293US10504738B2Focus ring for plasma etcherTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·7 cites·20 claims
- 2393US10269917B2Method of forming a FinFET with work function tuning layers having stair-step increment sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·7 cites·20 claims
- 2493US10079178B1Formation method of semiconductor device structure using multilayer resist layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 18, 2018·9 cites·20 claims
- 2593US9905456B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 27, 2018·7 cites·20 claims
- 2693US9837539B1FinFET device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·6 cites·19 claims
- 2792US11075279B2Metal gate and contact plug design and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 27, 2021·7 cites·20 claims
- 2892US11043251B2Magnetic tunnel junction device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·11 cites·20 claims
- 2992US10163715B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·6 cites·20 claims
- 3091US10510598B2Self-aligned spacers and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 17, 2019·7 cites·20 claims
- 3191US10121873B2Metal gate and contact plug design and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 6, 2018·6 cites·20 claims
- 3291US10037918B2Contact structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·7 cites·20 claims
- 3390US10679896B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·4 cites·18 claims
- 3490US10510875B2Source and drain structure with reduced contact resistance and enhanced mobilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 3589US10998259B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 4, 2021·4 cites·20 claims
- 3689US10679950B2Methods of forming recesses in substrates by etching dummy FinsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·4 cites·20 claims
- 3789US2025300016A1Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3887US11437484B2Gate structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 6, 2022·3 cites·20 claims
- 3987US10629480B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·4 cites·20 claims
- 4086US12347729B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 4186US10566232B2Post-etch treatment of an electrically conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·3 cites·20 claims
- 4286US10304729B2Method of forming interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·3 cites·20 claims
- 4385US12354913B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 4485US11569125B2Etch profile control of interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·1 cites·20 claims
- 4585US2024363409A1Methods for forming contact plugs with reduced corrosionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4684US10910223B2Doping through diffusion and epitaxy profile shapingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 2, 2021·3 cites·20 claims
- 4784US10153373B2FinFET device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·2 cites·20 claims
- 4883US12300593B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 4983US10763162B2Interconnect structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 1, 2020·2 cites·20 claims
- 5083US8693237B2Single-ended SRAM with cross-point data-aware write operationJOU SHYH-JYE·Filed 2012·Granted Apr 8, 2014·14 cites·10 claims
Showing the top 50 of 149 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →