Inventor · disambiguated record
Ying-Cheng Chuang
Also filed as: CHUANG YING-CHENG
50 granted patents·64 pending applications·284 citations·filing 2002–2025
98Inventor score
Top patents by PatentIndex Score
114 records- 0195US11830744B1Method of preparing active areasNANYA TECHNOLOGY CORP·Filed 2022·Granted Nov 28, 2023·2 cites·20 claims
- 0293US6916715B2Method for fabricating a vertical NROM cellNANYA TECHNOLOGY CORP·Filed 2003·Granted Jul 12, 2005·51 cites·10 claims
- 0392US12463090B2Method of manufacturing semiconductor structure including a planarization and semiconductor structure thereofNANYA TECHNOLOGY CORP·Filed 2023·Granted Nov 4, 2025·1 cites·15 claims
- 0490US12154821B2Method of manufacturing semiconductor device including isolation structure with nitridation layerNANYA TECHNOLOGY CORP·Filed 2022·Granted Nov 26, 2024·1 cites·9 claims
- 0590US11289366B1Method of manufacturing semiconductor structureNANYA TECHNOLOGY CORP·Filed 2020·Granted Mar 29, 2022·3 cites·9 claims
- 0687US9659886B2Method of fabricating semiconductor device having voids between top metal layers of metal interconnectsNANYA TECHNOLOGY CORP·Filed 2016·Granted May 23, 2017·7 cites·7 claims
- 0785US7022573B2Stack gate with tip vertical memory and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2004·Granted Apr 4, 2006·32 cites·8 claims
- 0885US2025287581A1Memory device including recessed gate structure having high-k gate dielectric layer and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 0984US2025240989A1Memory device including capacitor contacts having different materials and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1084US2025234514A1Memory device including word line structure having high-k gate dielectric layer and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1183US6893919B2Floating gate and fabricating method of the sameNANYA TECHNOLOGY CORP·Filed 2004·Granted May 17, 2005·26 cites·17 claims
- 1283US2025089272A1Semiconductor memory device manufacturing methodNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1382US7700991B2Two bit memory structure and method of making the sameNANYA TECHNOLOGY CORP·Filed 2007·Granted Apr 20, 2010·11 cites·7 claims
- 1482US6670246B1Method for forming a vertical nitride read-only memoryNANYA TECHNOLOGY CORP·Filed 2003·Granted Dec 30, 2003·31 cites·16 claims
- 1582US2025287579A1Memory device including recessed gate structure having high-k gate dielectric layer and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1681US2025240988A1Memory device including capacitor contacts having different materials and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1781US2025287578A1Memory device including recessed gate structure having high-k gate dielectric layer and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1881US2025234513A1Memory device including word line structure having high-k gate dielectric layer and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1981US2025240938A1Memory device including capacitor contacts having different materials and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 2080US8415728B2Memory device and method of fabricating the sameCHUANG YING CHENG·Filed 2010·Granted Apr 9, 2013·5 cites·9 claims
- 2180US2025234512A1Memory device including word line structure having high-k gate dielectric layer and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 2279US2025344372A1Memory device including word line structure having lower and upper gate electrode layers and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 2379US2025234521A1Semiconductor device with linered contact and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 2479US2025016998A1Semiconductor structure and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 2579US2025344373A1Memory device including word line structure having lower and upper gate electrode layers and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 2677US12482657B2Method of manufacturing semiconductor structure using multi-layer hard maskNANYA TECHNOLOGY CORP·Filed 2022·Granted Nov 25, 2025·0 cites·19 claims
- 2777US12094724B2Method of preparing active areasNANYA TECHNOLOGY CORP·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 2877US10943819B2Semiconductor structure having a plurality of capped protrusionsNANYA TECHNOLOGY CORP·Filed 2019·Granted Mar 9, 2021·2 cites·6 claims
- 2977US6847068B2Floating gate and fabrication method thereforNANYA TECHNOLOGY CORP·Filed 2003·Granted Jan 25, 2005·19 cites·19 claims
- 3077US2025234515A1Semiconductor device with contact having a liner layer and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 3177US2025234519A1Semiconductor device with linered contact and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 3277US2025016997A1Semiconductor structure and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 3377US2025253249A1Contact structure, semiconductor device with the same, and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 3477US2025253248A1Contact structure, semiconductor device with the same, and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 3576US2025253247A1Contact structure, semiconductor device with the same, and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 3676US2025299965A1Method of manufacturing semiconductor device for reducing defect in array regionNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 3776US2025234517A1Semiconductor device with linered contact and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 3876US2025192043A1Semiconductor device and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 3975US12396151B2Method of manufacturing semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 4075US2025031391A1Semiconductor device with programmable insulating layer and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 4174US12482748B2Method of manufacturing semiconductor structure including nitrogen treatment and semiconductor structure thereofNANYA TECHNOLOGY CORP·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 4274US12185555B2Semiconductor memory device manufacturing methodNANYA TECHNOLOGY CORP·Filed 2022·Granted Dec 31, 2024·0 cites·20 claims
- 4374US2024341078A1Memory device having planarized fins and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 4474US2024014040A1Method of manufacturing semiconductor structure using multi-layer hard maskNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 4574US2025234526A1Semiconductor device with contact having a liner layer and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 4674US2025234525A1Memory device including word line structure with high-k gate dielectric layer and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 4772US12183584B2Method of manufacturing semiconductor structure with improved etching processNANYA TECHNOLOGY CORP·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 4872US8426925B2Memory device and method of fabricating the sameCHUANG YING CHENG·Filed 2010·Granted Apr 23, 2013·3 cites·16 claims
- 4972US2025192038A1Semiconductor device and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 5072US2025194079A1Semiconductor device and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
Showing the top 50 of 114 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Ying-Cheng Chuang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →