Inventor · disambiguated record
Yitzhak Gilboa
Also filed as: GILBOA YITZHAK · GILBOA YITZHAK ERIC
7 granted patents·3 pending applications·237 citations·filing 1998–2013
88Inventor score
Top patents by PatentIndex Score
10 records- 0193US6399512B1Method of making metallization and contact structures in an integrated circuit comprising an etch stop layerCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Jun 4, 2002·83 cites·20 claims
- 0283US6635566B1Method of making metallization and contact structures in an integrated circuitCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Oct 21, 2003·31 cites·16 claims
- 0378US6191011B1Selective hemispherical grain silicon depositionASSOCIATES ISRAEL LTD AG·Filed 1998·Granted Feb 20, 2001·63 cites·54 claims
- 0473US6833622B1Semiconductor topography having an inactive region formed from a dummy structure patternCYPRESS SEMICONDUCTOR CORP·Filed 2003·Granted Dec 21, 2004·17 cites·20 claims
- 0567US7197737B1Techniques for placing dummy features in an integrated circuit based on dielectric pattern densityCYPRESS SEMICONDUCTOR CORP·Filed 2004·Granted Mar 27, 2007·18 cites·17 claims
- 0657US6204120B1Semiconductor wafer pretreatment utilizing ultraviolet activated chlorineASSOCIATES ISRAEL LTD AG·Filed 1998·Granted Mar 20, 2001·19 cites·30 claims
- 0756US6969684B1Method of making a planarized semiconductor structureCYPRESS SEMICONDUCTOR CORP·Filed 2001·Granted Nov 29, 2005·6 cites·30 claims
- 0850US2014272577A1Methods and apparatus for high capacity anodes for lithium batteriesSANDISK 3D LLC·Filed 2013·Application pending·0 cites
- 0946US2014272576A1Methods and apparatus for high capacity anodes for lithium batteriesSANDISK 3D LLC·Filed 2013·Application pending·0 cites
- 1040US2004082182A1Method of making metallization and contact structures in an integrated circuit using a timed trench etchCYPRESS SEMICONDUCTOR CORP·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →