Inventor · disambiguated record
Ying Ting Hsia
Also filed as: HSIA YING-TING
30 granted patents·2 pending applications·401 citations·filing 2016–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD32
Top patents by PatentIndex Score
32 records- 0198US11088025B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·12 cites·20 claims
- 0298US10083863B1Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·77 cites·20 claims
- 0398US9812363B1FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 7, 2017·237 cites·20 claims
- 0495US11776847B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
- 0594US10522408B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·8 cites·20 claims
- 0694US9865697B1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·20 cites·20 claims
- 0793US10269917B2Method of forming a FinFET with work function tuning layers having stair-step increment sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·7 cites·20 claims
- 0893US9905456B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 27, 2018·7 cites·20 claims
- 0992US10163715B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·6 cites·20 claims
- 1091US10510598B2Self-aligned spacers and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 17, 2019·7 cites·20 claims
- 1190US10679896B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·4 cites·18 claims
- 1287US11437484B2Gate structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 6, 2022·3 cites·20 claims
- 1385US12354913B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1485US11764081B2Wafer cleaning apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·1 cites·20 claims
- 1585US11056358B2Wafer cleaning apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 6, 2021·3 cites·19 claims
- 1685US10141443B2Semiconductor devices FinFET devices with optimized strained-sourece-drain recess profiles and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 27, 2018·4 cites·11 claims
- 1781US12165887B2Wafer cleaning apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1881US2025062140A1Wafer cleaning apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1979US10510839B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·2 cites·20 claims
- 2078US2025226263A1Contact Structure For Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2177US10157782B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 18, 2018·1 cites·20 claims
- 2274US12015070B2Gate structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 2371US11232978B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·20 claims
- 2468US11588020B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·0 cites·20 claims
- 2568US11532515B2Self-aligned spacers and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 2666US11251079B2Method for forming semiconductor device with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
- 2763US10651079B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·0 cites·20 claims
- 2862US11043559B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·0 cites·20 claims
- 2959US10930783B2Semiconductor devices, FinFET devices with optimized strained source-drain recess profiles and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 23, 2021·0 cites·20 claims
- 3058US10804149B2Self-aligned spacers and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 13, 2020·0 cites·20 claims
- 3157US10692762B2Semiconductor device with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·0 cites·20 claims
- 3252US10074563B2Structure and formation method of interconnection structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 11, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →