Inventor · disambiguated record
Yi-Hsiu Hsiao
Also filed as: HSIAO YI-HSIU
3 granted patents·2 pending applications·2 citations·filing 2009–2025
58Inventor score
Top patents by PatentIndex Score
5 records- 0186US11791338B2Semiconductor device having doped work function metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·1 cites·20 claims
- 0279US12249604B2Semiconductor device having doped work function metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
- 0375US11244945B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 8, 2022·1 cites·20 claims
- 0475US2025185357A1Semiconductor device having doped work function metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0553US2010127428A1Fabrication of carbon nanotubes reinforced semi-crystalline polymer composite bipolar plates for fuel cellUNIV YUAN ZE·Filed 2009·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →