Inventor · disambiguated record
Yi-Tse Hung
Also filed as: HUNG YI-TSE
12 granted patents·11 pending applications·10 citations·filing 2020–2025
85Inventor score
Top patents by PatentIndex Score
23 records- 0194US11688445B2Valley spin hall effect based non-volatile memoryPURDUE RESEARCH FOUNDATION·Filed 2022·Granted Jun 27, 2023·2 cites·19 claims
- 0293US11929115B2Memory device with SRAM cells assisted by non-volatile memory cells and operation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
- 0393US11250896B2Valley spin hall effect based non-volatile memoryPURDUE RESEARCH FOUNDATION·Filed 2020·Granted Feb 15, 2022·4 cites·19 claims
- 0490US11244866B2Low dimensional material device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·2 cites·20 claims
- 0585US12396229B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 0684US2025311339A1Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0781US12062696B2Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
- 0880US12170323B2Nano transistors with source/drain having side contacts to 2-D materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 0980US2025133778A1Fin field-effect transistor device with low-dimensional material and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1079US2025351368A1Memory structure and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1178US2024379800A1Nano transistors with source/drain having side contacts to 2-d materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1276US12211931B2Fin field-effect transistor device with low-dimensional material and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 1373US2024379874A1Transistor, semiconductor device, and semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1472US11749718B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·16 claims
- 1572US2024213246A1Semiconductor device, integrated circuit and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1671US11955527B2Nano transistors with source/drain having side contacts to 2-D materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 9, 2024·0 cites·20 claims
- 1768US11476356B2Fin field-effect transistor device with low-dimensional material and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·20 claims
- 1866US11948941B2Semiconductor device, integrated circuit and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 1966US2023008517A1Transistor, semiconductor device, and semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2064US2023225132A1Memory structure and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2157US2024105454A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2255US2024130100A1Memory device, and method for forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2352US2024113172A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →