Inventor · disambiguated record
Yi-Jing Li
Also filed as: LI YI-JING
12 granted patents·8 pending applications·4 citations·filing 2014–2025
83Inventor score
Top patents by PatentIndex Score
20 records- 0193US11942467B2Semiconductor structure, electronic device, and method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·2 cites·20 claims
- 0287US12183802B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 31, 2024·1 cites·20 claims
- 0384US12191401B2Manufacturing method for semiconductor structure having a plurality of finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 7, 2025·0 cites·20 claims
- 0481US12364017B2Semiconductor structure, electronic device, and method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 0581US2025098226A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0681US2025301793A1Semiconductor structure, electronic device, and method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0780US2025081586A1Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0874US12237229B2Shallow trench isolation structures having uniform step heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 0974US11916151B2Semiconductor structure having fin with all around gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·0 cites·20 claims
- 1074US2024363433A1Shallow trench isolation structures having uniform step heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1171US2024154028A1Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1269US9650266B2Method of treating suspended solids and heavy metal ions in sewageINER AEC EXECUTIVE YUAN·Filed 2014·Granted May 16, 2017·1 cites·11 claims
- 1366US12020950B2Semiconductor structure and method for forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 1465US11923436B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 1564US12464752B2Method of forming shaped source/drain epitaxial layers of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 1662US11562910B2Semiconductor structure and method for forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·0 cites·20 claims
- 1760US2025280595A1Transistor and semiconductor device using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1856US11699620B2Shallow trench isolation structures having uniform step heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·0 cites·19 claims
- 1955US2025056872A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2053US2024371954A1Semiconductor device having reduced noise and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →