Inventor · disambiguated record
Ying Li
Also filed as: LI YING · Li Ying Nan
12 granted patents·4 pending applications·2 citations·filing 2011–2021
81Inventor score
Files withERICSSON TELEFON AB L M3SEMICONDUCTOR MFG INT SHANGHAI3SEMICONDUCTOR MFG INT SHANGHAI CORP3PHOGRAIN TECH SHENZHEN CO LTD2SEMICONDUCTOR MFG INT BEIJING CORP2
Top patents by PatentIndex Score
16 records- 0170US9006022B2Method for fabricating phase change memorySEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Apr 14, 2015·2 cites·20 claims
- 0259US11417609B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
- 0358US12444825B2Dielectric filter, and AU, RU or BS having the sameERICSSON TELEFON AB L M·Filed 2021·Granted Oct 14, 2025·0 cites·10 claims
- 0458US11955682B2CWG filter, and RU, AU or BS having the sameERICSSON TELEFON AB L M·Filed 2020·Granted Apr 9, 2024·0 cites·20 claims
- 0555US12255375B2AU and RU having CWG filters, and BS having the AU or RUERICSSON TELEFON AB L M·Filed 2021·Granted Mar 18, 2025·0 cites·16 claims
- 0650US10854558B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2019·Granted Dec 1, 2020·0 cites·20 claims
- 0749US11894471B2Photoelectric chip, manufacturing method and installation methodPHOGRAIN TECH SHENZHEN CO LTD·Filed 2021·Granted Feb 6, 2024·0 cites·16 claims
- 0847US9419054B2Phase-change device, related manufacturing method, and related electronic deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Aug 16, 2016·0 cites·12 claims
- 0945US9209387B2Phase change memory and fabrication methodSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Dec 8, 2015·0 cites·19 claims
- 1044US9589837B2Electrode manufacturing method, fuse device and manufacturing method thereforSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2013·Granted Mar 7, 2017·0 cites·11 claims
- 1144US9136469B2Phase change memoriesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted Sep 15, 2015·0 cites·20 claims
- 1244US2016163338A1Tunneling magnetoresistive (tmr) sensor with a soft bias layerHGST Netherlands BV·Filed 2014·Application pending·0 cites
- 1341US11189495B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2020·Granted Nov 30, 2021·0 cites·18 claims
- 1440US2024128715A1Photodiode chip, photodiode, and method and for controlling wavelength of photodiodePHOGRAIN TECH SHENZHEN CO LTD·Filed 2021·Application pending·0 cites
- 1538US2017239657A1Single cell patterning and coordinated transfer of patterned cellsMETHODIST HOSPITAL·Filed 2015·Application pending·0 cites
- 1633US2013292629A1Phase change memory cell and fabrication method thereofLIU BO·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →