Inventor · disambiguated record
Yi-Bo Liao
Also filed as: LIAO YI-BO
35 granted patents·24 pending applications·34 citations·filing 2019–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD59
Top patents by PatentIndex Score
59 records- 0198US11251308B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·5 cites·20 claims
- 0298US11227917B1Nano-sheet-based devices with asymmetric source and drain configurationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·9 cites·20 claims
- 0397US11532627B2Source/drain contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·5 cites·20 claims
- 0492US12119271B1Backside gate contact, backside gate etch stop layer, and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·1 cites·20 claims
- 0592US11658119B2Backside signal interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·2 cites·20 claims
- 0691US11264508B2Leakage prevention structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·2 cites·20 claims
- 0791US11031298B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·5 cites·20 claims
- 0890US11855224B2Leakage prevention structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 0990US11757042B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·1 cites·20 claims
- 1087US12094938B2Semiconductor device with low resistances and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·1 cites·20 claims
- 1186US2025311379A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1285US12376366B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 1383US12148837B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 1483US2024372008A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1582US11621195B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 4, 2023·1 cites·20 claims
- 1682US2025359228A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1781US12211790B2Conductive rail structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 1881US11309240B2Conductive rail structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·1 cites·20 claims
- 1981US2025318270A1Backside gate contact, backside gate etch stop layer, and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2080US11996332B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·0 cites·20 claims
- 2179US12230572B2Backside signal interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 2279US2025357317A1Device with gate-to-drain via and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2379US2025331253A1Hybrid nanowire and nanosheet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2477US2025351563A1Complementary field effect transistor with hybrid nanostructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2576US2024387376A1Semiconductor devices with front side to backside conductive paths and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2676US2025324684A1Field effect transistor with air spacer and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2776US2025316562A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2876US2025311410A1Dielectric walls for complementary field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2976US2025204049A1Backside Gate Contact, Backside Gate Etch Stop Layer, and Methods of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3075US11948989B2Gate-all-around device with protective dielectric layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 3175US11837538B2Conductive rail structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
- 3275US2025294828A1Hybrid nanowire and nanosheet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3374US2025031429A1Semiconductor structure with conductive carbon layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3474US2025299959A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3574US2025253242A1Backside signal interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3674US2025318250A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3773US12394706B2Device with gate-to-drain via and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
- 3873US12347748B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 3973US2025292524A1Semiconductor device having a gate contact on a low-k linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4073US2024363702A1Semiconductor device with low resistances and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4172US12419103B2Dielectric walls for complementary field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 4271US12426327B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 4371US12334350B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 4471US2025226310A1Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4570US12506078B2Semiconductor devices with front side to backside conductive paths and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 23, 2025·0 cites·20 claims
- 4670US12389641B2Field effect transistor with air spacer and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 4770US11705488B2Nano-sheet-based devices with asymmetric source and drain configurationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 18, 2023·0 cites·20 claims
- 4869US12349409B2Semiconductor device having a gate contact on a low-k linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 4967US12363992B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 5067US11532715B2Source/drain contacts for semiconductor devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Yi-Bo Liao files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →