Inventor · disambiguated record
Ying Hsin Lu
Also filed as: LU YING HSIN
13 granted patents·6 pending applications·13 citations·filing 2019–2025
87Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD19
Top patents by PatentIndex Score
19 records- 0196US12021130B2Circuit structure with gate configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 0296US11949000B2Metal gate structures and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·3 cites·20 claims
- 0394US12027609B2Gate structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
- 0490US11588038B2Circuit structure with gate configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·2 cites·20 claims
- 0589US11450758B2Gate structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
- 0687US11961891B2Structure for metal gate electrode and method of fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·1 cites·20 claims
- 0787US2025359276A1Circuit Structure with Gate ConfigurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0886US2025359309A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0983US12464801B2Circuit structure with gate configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 1081US11502185B2Methods of manufacturing a gate electrode having metal layers with different average grain sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·1 cites·20 claims
- 1178US12507429B2Metal gate structures and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 23, 2025·0 cites·20 claims
- 1278US2024387536A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1378US2024363734A1P-Type FiNFET as a Radio-Frequency Device and Method Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1477US2024322016A1Gate structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1575US12113120B2Gate electrode having a work-function layer including materials with different average grain sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 1672US2023387230A1Novel structure for metal gate electrode and method of fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1770US12324230B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 3, 2025·0 cites·14 claims
- 1863US11282934B2Structure for metal gate electrode and method of fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 22, 2022·0 cites·20 claims
- 1956US11476351B2Metal gate structures and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →