Inventor · disambiguated record
Yi-Hsin Nien
Also filed as: NIEN YI-HSIN
19 granted patents·19 pending applications·19 citations·filing 2019–2025
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD38
Top patents by PatentIndex Score
38 records- 0196US11404113B2Memory device including a word line with portions with different sizes in different metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·5 cites·20 claims
- 0295US11682440B2Systems and methods for memory operation using local word linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 20, 2023·3 cites·20 claims
- 0395US11631456B2Bitcell supporting bit-write-mask functionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 18, 2023·2 cites·20 claims
- 0495US11569246B2Four CPP wide memory cell with buried power grid, and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·3 cites·20 claims
- 0593US12137548B2Four CPP wide memory cell with buried power grid, and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·1 cites·20 claims
- 0691US2025364038A1Memory device and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0789US11183234B2Bitcell supporting bit-write-mask functionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·4 cites·20 claims
- 0884US2024386945A1Memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0982US2025318098A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1082US2025349326A1Semiconductor memory devices with flying bit lines and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1181US2025356906A1Devices and methods for adjusting signal pulse widthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1280US12369292B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 1380US2025078889A1Systems and Methods for Memory Operation Using Local Word LinesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1480US2025063709A1Memory cell with buried power grid, and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1579US12334145B2Bitcell supporting bit-write-mask functionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·19 claims
- 1679US11264070B2Systems and methods for memory operation using local word linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·1 cites·20 claims
- 1779US2025351322A1Memory device and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1878US12159688B2Systems and methods for memory operation using local word linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 1977US12367929B2Memory device having a negative voltage circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 2077US2025343537A1Latch circuits and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2175US12125523B2Memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 22, 2024·0 cites·20 claims
- 2274US2025220868A1Memory device and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2373US12230318B2Memory device including a word line with portions with different sizes in different metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims
- 2473US11929116B2Memory device having a negative voltage circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 12, 2024·0 cites·20 claims
- 2572US2024179884A1Semiconductor device and method for forming a sram memory cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2671US2025157531A1Memory device including a word line with portions with different sizes in different metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2770US12260903B2Memory devices with improved bit line loadingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 2870US2025201303A1Memory devices with improved bit line loadingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2968US11805636B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 31, 2023·0 cites·20 claims
- 3067US11910587B2Memory circuit having SRAM memory cells and method for forming a SRAM memory cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 3166US2025014614A1Semiconductor memory devices with flying bit lines and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3265US11562786B2Memory device having a negative voltage circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·0 cites·20 claims
- 3363US2025343132A1Memory devices with via structrues and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3459US12387768B2Memory device including separate negative bit lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 3559US2025118632A1Memory devices with switchable power delivery pathsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3656US2024145385A1Memory devices with row-based configured supply voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3755US2024404588A1Fly shared bit line on 4-cpp static random access memory (sram) cell and arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3852US2025374505A1Memory devices and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →