Inventor · disambiguated record
Yi Ching Ong
Also filed as: ONG YI CHING
8 granted patents·47 pending applications·0 citations·filing 2022–2025
73Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD55
Top patents by PatentIndex Score
55 records- 0184US2025365977A1Ferroelectric tunnel junction (ftj) structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0282US2025342878A1Gain-cell random access memory with enhanced retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0382US2025344400A1Anti-ferroelectric tunnel junction with asymmetrical metal electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0480US2025359083A1Methods of forming ferromagnetic plates for enhancing inductanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0579US2025344399A1Ferroelectric tunnel junction memory devices with enhanced read windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0679US2025357324A1Passive devices in bonding layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0779US2025365980A1Ferroelectric tunnel junctions with conductive electrodes having asymmetric nitrogen or oxygen profilesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0878US2025365967A1Ferroelectric-based memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0977US2025364482A1Memory Device and Method of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1076US2025336752A1Techniques for heat dispersion in 3d integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1176US2025336758A1Thermal dissipation in power ic using pyroelectric materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1275US12495723B2Phase change material (PCM) switch with variably spaced spreader layer structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 9, 2025·0 cites·20 claims
- 1375US2025169051A1Gate structure disposed between fin structures to decrease leakage in gain cell random access memory (gcram)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1475US2025323157A1Ferroelectric structure lining conductive interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1574US2024355949A1Energy harvest and storage device for semiconductor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1674US2025366370A1Pyroelectric device for a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1774US2025324564A1Gate structure disposed between fin structures to decrease leakage in gain cell random access memory (gcram)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1872US2024371798A1Energy harvest and storage device for semiconductor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1971US2024379656A1Integrated chip with solid-state power storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2071US2024389349A1Memory device structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2169US12057516B2Energy harvest and storage device for semiconductor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 2268US12482717B2Techniques for heat dispersion in 3D integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 2368US12469803B2Energy harvest and storage device for semiconductor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 2468US12200943B2Memory device structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 2567US12408349B2Ferroelectric tunnel junctions with conductive electrodes having asymmetric nitrogen or oxygen profilesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 2667US12302628B2Integrated chip with solid-state power storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 2767US2024088026A1Passive devices in bonding layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2867US2024274532A1Ferroelectric structure lining conductive interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2967US2025359034A1Back-end-of-line semiconductor device structure providing a not-gate logic function and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3067US2023389324A1Ferroelectric-based memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3166US2025166695A1Gain-cell random access memory with enhanced retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3265US2023413673A1Pyroelectric device for a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3364US12426272B2Ferroelectric tunnel junction memory devices with enhanced read windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 3464US2023011305A1Anti-ferroelectric tunnel junction with asymmetrical metal electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3564US2023299042A1Memory Device and Method of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3664US2023268244A1Thermal dissipation in power ic using pyroelectric materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3763US2024047508A1Ferromagnetic plates for enhancing inductance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3861US2025336860A1Hybrid-bonding stack including a processor die and multi-cache-level memory dies and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3959US2025212705A1Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4058US2025142845A1Catalytic metal plate in a metal-insulator-metal capacitor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4156US2025344615A1Phase-change deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4256US2024381662A1Ferroelectric memory device comprising a chimney seed structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4356US2024397728A1Ferroelectric memory device with semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4456US2025301621A1Asymmetrical capacitor having low leakage current and memory cell using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4555US2024234401A9Semiconductor die package and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4655US2024332170A1Inductor embedded in a substrate of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4753US2023422642A1Phase-change material (pcm) radio frequency (rf) switching device with air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4853US2025142836A1Neural network circuit and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4952US2024147731A1Semiconductor devices and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5051US2024040799A1Ferroelectric tunnel junction deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →