Inventor · disambiguated record
Ying-Ru Shih
Also filed as: SHIH YING-RU
23 granted patents·8 pending applications·8 citations·filing 2016–2024
90Inventor score
Top patents by PatentIndex Score
31 records- 0184US10475637B2Semiconductor substrate and manufacturing method thereofGLOBALWAFERS CO LTD·Filed 2017·Granted Nov 12, 2019·4 cites·4 claims
- 0279US11211308B2Semiconductor device and manufacturing method thereofGLOBALWAFERS CO LTD·Filed 2019·Granted Dec 28, 2021·3 cites·10 claims
- 0376US11588014B2Epitaxial structureGLOBALWAFERS CO LTD·Filed 2022·Granted Feb 21, 2023·0 cites·10 claims
- 0476US11588015B2Epitaxial structureGLOBALWAFERS CO LTD·Filed 2022·Granted Feb 21, 2023·0 cites·10 claims
- 0575US11923454B2Epitaxial structure having super-lattice laminatesGLOBALWAFERS CO LTD·Filed 2021·Granted Mar 5, 2024·1 cites·8 claims
- 0675US11532700B2Epitaxial structureGLOBALWAFERS CO LTD·Filed 2022·Granted Dec 20, 2022·0 cites·10 claims
- 0772US2025205821A1Processing method of single crystal material and processing objectGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 0867US2024262084A1Silicon carbide seed crystalGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 0965US11688628B2Method of manufacturing epitaxy substrateGLOBALWAFERS CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·15 claims
- 1064US2024173819A1Wafer grinding parameter optimization method and electronic deviceGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 1163US11316007B2Epitaxial structureGLOBALWAFERS CO LTD·Filed 2019·Granted Apr 26, 2022·0 cites·4 claims
- 1258US10510830B2N-type polysilicon crystal, manufacturing method thereof, and N-type polysilicon waferSINO AMERICAN SILICON PROD INC·Filed 2018·Granted Dec 17, 2019·0 cites·10 claims
- 1357US12484269B2Semiconductor structureGLOBALWAFERS CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·14 claims
- 1457US12051724B2Semiconductor epitaxy structureGLOBALWAFERS CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·10 claims
- 1557US11534794B2Crucible structure and method for forming isolating layer of crucibleSINO AMERICAN SILICON PROD INC·Filed 2020·Granted Dec 27, 2022·0 cites·8 claims
- 1656US11201080B2Epitaxy substrate and method of manufacturing the sameGLOBALWAFERS CO LTD·Filed 2019·Granted Dec 14, 2021·0 cites·14 claims
- 1754US11456362B2Epitaxial structure and semiconductor deviceGLOBALWAFERS CO LTD·Filed 2020·Granted Sep 27, 2022·0 cites·13 claims
- 1853US2024371945A1Silicon carbide substrate and manufacturing method thereofGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 1951US11757003B2Bonding wafer structure and method of manufacturing the sameGLOBALWAFERS CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·17 claims
- 2050US11538681B2Epitaxy substrate and method of manufacturing the sameGLOBALWAFERS CO LTD·Filed 2019·Granted Dec 27, 2022·0 cites·7 claims
- 2150US11335780B2Epitaxial structureGLOBALWAFERS CO LTD·Filed 2020·Granted May 17, 2022·0 cites·16 claims
- 2249US10629718B2III-nitride epitaxial structureGLOBALWAFERS CO LTD·Filed 2018·Granted Apr 21, 2020·0 cites·21 claims
- 2347US12224322B2Epitaxial structure having diffusion barrier layerGLOBALWAFERS CO LTD·Filed 2021·Granted Feb 11, 2025·0 cites·7 claims
- 2445US12281411B2Epitaxial structureGLOBALWAFERS CO LTD·Filed 2020·Granted Apr 22, 2025·0 cites·4 claims
- 2545US2021017669A1Semiconductor epitaxial structure and method of forming the sameGLOBALWAFERS CO LTD·Filed 2020·Application pending·0 cites
- 2644US10103108B2Nanostructured chip and method of producing the sameGLOBALWAFERS CO LTD·Filed 2016·Granted Oct 16, 2018·0 cites·8 claims
- 2742US9611548B2Wafer rotating apparatusGLOBALWAFERS CO LTD·Filed 2016·Granted Apr 4, 2017·0 cites·15 claims
- 2841US10490432B2Wafer carrierGLOBALWAFERS CO LTD·Filed 2017·Granted Nov 26, 2019·0 cites·15 claims
- 2939US2020127115A1Manufacturing method of high electron mobility transistorGLOBALWAFERS CO LTD·Filed 2018·Application pending·0 cites
- 3039US2016312379A1Melt gap measuring apparatus, crystal growth apparatus and melt gap measuring methodGLOBALWAFERS CO LTD·Filed 2016·Application pending·0 cites
- 3133US2017162378A1Method of manufacturing substrate for epitaxyCHEN MIIN-JANG·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →